STD12N60DM2AG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STD12N60DM2AG
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 110 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 32 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.43 Ohm
Тип корпуса: TO252
Аналог (замена) для STD12N60DM2AG
STD12N60DM2AG Datasheet (PDF)
std12n60dm2ag.pdf
STD12N60DM2AGDatasheet Automotive-grade N-channel 600 V, 380 m typ., 10 A MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS @ TJmax RDS(on ) max. IDOrder codeTABSTD12N60DM2AG 650 V 430 m 10 A321DPAK AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitanceD(2, TAB) Low on-resistance 100% avalanche test
std12n65m2.pdf
STD12N65M2 N-channel 650 V, 0.42 typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD12N65M2 650 V 0.5 8 A Extremely low gate charge Excellent output capacitance (COSS) profile DPAK (TO-252) 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applicatio
std12n65m5 stf12n65m5 sti12n65m5 stp12n65m5 stu12n65m5.pdf
STD12N65M5, STF12N65M5, STI12N65M5STP12N65M5, STU12N65M5N-channel 650 V, 0.39 , 8.5 A MDmesh V Power MOSFETDPAK, I2PAK, TO-220FP, TO-220, IPAKFeaturesVDSS @ RDS(on) Type ID PTOT3TJmax max231 21STD12N65M5 8.5 A 70 WIPAK TO-220STF12N65M5 8.5 A(1) 25 W3STI12N65M5 710 V
std12n05l-1 std12n05lt4 std12n06l-1 std12n06lt4.pdf
STD12N05LSTD12N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD12N05L 50 V
std12n05-1 std12n05t4 std12n06-1 std12n06t4.pdf
STD12N05STD12N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD12N05 50 V
std12nf06l.pdf
STD12NF06LSTD12NF06L-1N-channel 60V - 0.08 - 12A - DPAK - IPAKSTripFET II Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD12NF06L 60V
std12n.pdf
STD12N05LSTD12N06LN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD12N05L 50 V
std12nm50n stf12nm50n sti12nm50n stp12nm50n.pdf
STB12NM50N,STD12NM50N,STI12NM50NSTF12NM50N, STP12NM50NN-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFETTO-220 - DPAK - D2PAK - I2PAK - TO-220FPFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB12NM50N 550 V 0.38 11 AIPAKTO-220STD12NM50N 550 V 0.38 11 A31STI12NM50N 550 V 0.38 11 ADPAKSTF12NM50N 550 V 0.38 11 A (1)STP12NM50N 5
stb12nm50n std12nm50n sti12nm50n stf12nm50n stp12nm50n.pdf
STB12NM50N,STD12NM50N,STI12NM50NSTF12NM50N, STP12NM50NN-channel 500 V, 0.29 , 11 A MDmesh II Power MOSFETTO-220 - DPAK - D2PAK - I2PAK - TO-220FPFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB12NM50N 550 V 0.38 11 AIPAKTO-220STD12NM50N 550 V 0.38 11 A31STI12NM50N 550 V 0.38 11 ADPAKSTF12NM50N 550 V 0.38 11 A (1)STP12NM50N 5
stb12nm50nd std12nm50nd stf12nm50nd.pdf
STB12NM50NDSTD12NM50ND, STF12NM50NDN-channel 500 V, 0.29 , 11 A, FDmesh II Power MOSFET(with fast diode) in D2PAK, DPAK, TO-220FPFeatures Type VDSS (@Tjmax) RDS(on) max IDSTB12NM50ND 550 V 0.38 11 ASTD12NM50ND 550 V 0.38 11 ASTF12NM50ND 550 V 0.38 11 A33 3211 1 100% avalanche testedD2PAK DPAK TO-220FP Low input capacitance and gate charge
std12ne06l.pdf
STD12NE06L N - CHANNEL 60V - 0.09 - 12A - DPAKSINGLE FEATURE SIZE POWER MOSFETTYPE VDSS RDS(on) IDSTD12NE06L 60 V
std12nf06.pdf
STD12NF06N-CHANNEL 60V - 0.08 - 12A IPAK/DPAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTD12NF06 60 V
std12nf06-1.pdf
STD12NF06STD12NF06T4N-channel 60 V, 0.08, 12 A, DPAK, IPAKSTripFET II Power MOSFETFeaturesVDSSS RDS(on) IDTypeSTD12NF06 60V
std12ne06.pdf
STD12NE06 N - CHANNEL 60V - 0.08 - 12A - DPAKSINGLE FEATURE SIZE POWER MOSFETTYPE VDSS RDS(on) IDSTD12NE06 60 V
std12nf06l std12nf06l-1.pdf
STD12NF06LSTD12NF06L-1N-channel 60V - 0.08 - 12A - DPAK - IPAKSTripFET II Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD12NF06L 60V
std12n50m2.pdf
STD12N50M2N-channel 500 V, 0.325 typ.,10 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTD12N50M2 500 V 0.38 10 ATAB Extremely low gate charge3 Excellent output capacitance (COSS) profile1 100% avalanche testedDPAK Zener-protectedApplications Switching applicationsFigure 1. Int
std12nf06 std12nf06t4.pdf
STD12NF06STD12NF06T4N-channel 60 V, 0.08, 12 A, DPAK, IPAKSTripFET II Power MOSFETFeaturesVDSSS RDS(on) IDTypeSTD12NF06 60V
std12nf06l-1 std12nf06lt4.pdf
STD12NF06LSTD12NF06L-1N-channel 60V - 0.08 - 12A - DPAK - IPAKSTripFET II Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD12NF06L 60V
std12n05.pdf
STD12N05STD12N06N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD12N05 50 V
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Список транзисторов
Обновления
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