STP13N60DM2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STP13N60DM2
Маркировка: 13N60DM2
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 110 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 19 nC
trⓘ - Время нарастания: 4.8 ns
Cossⓘ - Выходная емкость: 38 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.365 Ohm
Тип корпуса: TO220
Аналог (замена) для STP13N60DM2
STP13N60DM2 Datasheet (PDF)
stp13n60dm2.pdf
STP13N60DM2DatasheetN-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a TO-220 packageFeaturesVDS RDS(on ) max. IDOrder codeTABSTP13N60DM2 600 V 0.365 11 A Fast-recovery body diode32 Extremely low gate charge and input capacitance1 Low on-resistanceTO-220 100% avalanche tested Extremely high dv/dt ruggednessD(2, TAB) Ze
stp13n60m2 stu13n60m2 stw13n60m2.pdf
STP13N60M2, STU13N60M2, STW13N60M2N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in TO-220, IPAK and TO-247 packagesDatasheet - production dataFeaturesTABTABOrder codes VDS @ TJmax RDS(on) max ID321STP13N60M2321IPAKSTU13N60M2 650 V 0.38 11 ATO-220STW13N60M2 Extremely low gate charge Lower RDS(on) x area vs previous g
stp13n65m2 stu13n65m2.pdf
STP13N65M2, STU13N65M2N-channel 650 V, 0.37 typ.,10 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packagesDatasheet - production dataFeaturesRDS(on) Order code VDS IDmaxTABSTP13N65M2TAB650 V 0.43 10ASTU13N65M232132 Extremely low gate charge1TO-220 Excellent output capacitance (Coss) profileIPAK 100% avalanche tested Zener-pr
stb13nk60zt4 stp13nk60z stp13nk60zfp stw13nk60z.pdf
STB13NK60ZT4, STP13NK60ZSTP13NK60ZFP, STW13NK60ZN-channel 600 V, 0.48 , 13 A, TO-220, TO-220FP, D2PAKTO-247 Zener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax332STB13NK60ZT4 600 V
stb13nk60zt4 stw13nk60z stp13nk60zfp.pdf
STB13NK60ZT4, STP13NK60ZSTP13NK60ZFP, STW13NK60ZN-channel 600 V, 0.48 , 13 A, TO-220, TO-220FP, D2PAKTO-247 Zener-protected SuperMESH Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax332STB13NK60ZT4 600 V
stp13nk60z.pdf
STP13NK60Z/FP, STB13NK60ZSTB13NK60Z-1, STW13NK60ZN-CHANNEL 600V-0.48-13A TO-220/FP/D2PAK/I2PAK/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP13NK60Z 600 V
stb13nm50n-1 stb13nm50n stf13nm50n stp13nm50n stw13nm50n.pdf
STB13NM50N/-1 - STF13NM50NSTP13NM50N - STW13NM50NN-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFETTO-220 - TO-247 - TO-220FP - I2PAK - D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB13NM50N 550 V 0.32 12 ATO-220 IPAKSTB13NM50N-1 550 V 0.32 12 ASTF13NM50N 550 V 0.32 12 A(1) 321STP13NM50N 550 V 0.32 12 ATO-247STW13N
stf13n95k3 stp13n95k3 stw13n95k3.pdf
STF13N95K3STP13N95K3, STW13N95K3N-channel 950 V, 0.68 , 10 A TO-220, TO-220FP, TO-247Zener-protected SuperMESH3 Power MOSFETFeaturesOrder codes VDSS RDS(on)max ID PWSTF13N95K3 40 W33221STP13N95K3 950 V
stb13nm50n stf13nm50n stp13nm50n stw13nm50n.pdf
STB13NM50N/-1 - STF13NM50NSTP13NM50N - STW13NM50NN-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFETTO-220 - TO-247 - TO-220FP - I2PAK - D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB13NM50N 550 V 0.32 12 ATO-220 IPAKSTB13NM50N-1 550 V 0.32 12 ASTF13NM50N 550 V 0.32 12 A(1) 321STP13NM50N 550 V 0.32 12 ATO-247STW13N
stp13nk50z.pdf
STF13NK50ZSTP13NK50Z, STW13NK50ZN-channel 500 V, 0.40 , 11 A TO-220, TO-220FP, TO-247Zener-protected SuperMESHTM Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTF13NK50Z 500 V
stb13nm60n std13nm60n stf13nm60n stp13nm60n stw13nm60n.pdf
STB13NM60N,STD13NM60N,STF13NM60NSTP13NM60N,STW13NM60NN-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFETin D2PAK, DPAK, TO-220FP, TO-220, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max3322STB13NM60N 650 V
stb13n80k5 stf13n80k5 stp13n80k5 stw13n80k5.pdf
STB13N80K5, STF13N80K5, STP13N80K5, STW13N80K5N-channel 800 V, 0.37 typ., 12 A SuperMESH 5 PowerMOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeatures TABOrder codes VDS RDS(on) ID PTOT31STB13N80K5 190 W3D2PAK21STF13N80K5 35 WTO-220FP800 V 0.45 12 ATABSTP13N80K5190 WSTW13N80K5 Worldwide best FOM (figur
std13nm60nd stf13nm60nd stp13nm60nd.pdf
STD13NM60ND, STF13NM60ND, STP13NM60NDN-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS @ TJmax RDS(on) max ID313STD13NM60ND21DPAKSTF13NM60ND 650 V 0.38 11 ATO-220FPSTP13NM60NDTAB The worldwide best RDS(on)* area among fast recove
stf13n95k3 stfi13n95k3 stp13n95k3 stw13n95k3.pdf
STF13N95K3, STFI13N95K3, STP13N95K3, STW13N95K3N-channel 950 V, 0.68 typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP, TO-220 and TO-247Datasheet - production dataFeaturesOrder codes VDSS RDS(on)max ID PTOTSTF13N95K340 WSTFI13N95K3950 V
stf13nm60n sti13nm60n stp13nm60n stu13nm60n stw13nm60n.pdf
STF13NM60N, STI13NM60N, STP13NM60N,STU13NM60N, STW13NM60NN-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFET in TO-220FP, IPAK, TO-220, IPAK, TO-247 packagesDatasheet production dataFeaturesTABVDSS RDS(on) Order codes ID(@Tjmax) max3322 1STF13NM60N 1IPAKTO-220FPSTI13NM60NSTP13NM60N 650 V
stf13nk50z stp13nk50z stw13nk50z.pdf
STF13NK50ZSTP13NK50Z, STW13NK50ZN-channel 500 V, 0.40 , 11 A TO-220, TO-220FP, TO-247Zener-protected SuperMESHTM Power MOSFETFeaturesRDS(on) Type VDSS ID PwmaxSTF13NK50Z 500 V
stp13nm60n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP13NM60NFEATURESTypical R (on)=0.28DSLow gate input resistance100% avalanche testedLow input capacitance and gate chargeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
stp13nm60nd.pdf
INCHANGE Semiconductorisc N-Channel Mosfet Transistor STP13NM60NDFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
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Список транзисторов
Обновления
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