STW48N60DM2 - Даташиты. Аналоги. Основные параметры

STW48N60DM2 N-channel 600 V, 0.065 typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTW48N60DM2 600 V 0.079 40 A Fast-recovery body diode Extremely low gate charge and input 3capacitance 2 Low on-resistance 1 100% avalanche tested Extremely high dv/dt ruggedness

STW48N60M2-4 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW48N60M2-4 650 V 0.07 42 A Excellent switching performance thanks to the extra driving source pin Extremely low gate charge Excellent output capacitance (C ) profile oss 100% a

STW48N60M6-4DatasheetN-channel 600 V, 61 m typ., 39 A, MDmesh M6 Power MOSFET in a TO2474 packageFeaturesVDS RDS(on) max. IDOrder codeSTW48N60M6-4 600 V 69 m 39 A Reduced switching losses Lower RDS(on) per area vs previous generation432 Low gate input resistance1 100% avalanche testedTO247-4 Zener-protectedDrain(1) Excellent swit

STW48N60M2 N-channel 600 V, 0.06 typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V Jmax DS(on) DDS @ T R max I STW48N60M2 650 V 0.07 42 A Extremely low gate charge Excellent output capacitance (C ) profile OSS32 100% avalanche tested 1 Zener-protected TO-247Applications Switchin

STW48N60M6DatasheetN-channel 600 V, 61 m typ., 39 A, MDmesh M6 Power MOSFET in a TO247 packageFeaturesVDS RDS(on) max. IDOrder codeSTW48N60M6 600 V 69 m 39 A Reduced switching losses32 Lower RDS(on) per area vs previous generation1 Low gate input resistanceTO-247 100% avalanche tested Zener-protectedD(2, TAB)Applications Switchin