SI1016X - описание и поиск аналогов

Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (mA) Definition 0.70 at VGS = 4.5 V 600 TrenchFET Power MOSFETs 0.85 at VGS = 2.5 V 500 N-Channel 20 2000 V ESD Protection Very Small Footprint 1.25 at VGS = 1.8 V 350 High-Side Switching

New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition TrenchFET Power MOSFETs 0.396 at VGS = 4.5 V 0.5 High-Side Switching 0.456 at VGS = 2.5 V 0.2 Ease in Driving Switches N-Channel 20 0.75 nC 0.546 at VGS = 1

Si1012CR Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 1.2 V Rated VDS (V) RDS(on) ( ) ID (mA) Qg (Typ.) 100 % Rg Tested 0.396 at VGS = 4.5 V 600 Gate-Source ESD Protected 1000 V Material categorization 0.456 at VGS = 2.5 V 500 For definitions of compliance please see 20 0.75 0.546 at VGS = 1.8 V 350 www.vis

Si1011X Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Typical ESD protection 700 V (HBM) 0.640 at VGS = - 4.5 V - 0.48 Fast Switching Speed 0.880 at VGS = - 2.5 V - 0.41 Material categorization For definitions of compliance please see 1.200 at VGS = - 1.8 V - 0.35 1.1

Si1013CX Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.760 at VGS = - 4.5 V - 0.45 100 % Rg Tested 1.040 at VGS = - 2.5 V - 0.40 1 nC - 20 Typical ESD protection 1000 V (HBM) 1.5 at VGS = - 1.8 V - 1.5 Fast Switchin

Si1012R/X Vishay Siliconix N-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 0.70 at VGS = 4.5 V 600 TrenchFET Power MOSFET 1.8 V Rated Gate-Source ESD Protected 2000 V 0.85 at VGS = 2.5 V 20 500 High-Side Switching 1.25 at VGS = 1.8 V 350 Low On-Resistance 0.7

Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 1.8 V Rated VDS (V) RDS(on) ( )ID (mA) Gate-Source ESD Protected 2000 V 0.70 at VGS = 4.5 V 600 High-Side Switching 0.85 at VGS = 2.5 V Low On-Resistance 0.7 20 500 Low Threshold 0.8 V (typ.) 1.25 at VGS = 1.8 V 350 Fast Switc

SI1012 Features Low Threshold ESD Protected Gate Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range -55 C to

LESHAN RADIO COMPANY, LTD. LSI1012LT1G N-Channel 1.8-V (G-S) MOSFET S-LSI1012LT1G FEATURES 3 D TrenchFETr Power MOSFET 1.8-V Rated D Gate-Source ESD Protected D High-Side Switching 1 D Low On-Resistance 0.7 W D Low Threshold 0.8 V (typ) 2 D Fast Switching Speed 10 ns D S- Prefix for Automotive and Other Applications Requiring SOT-23 Unique Site and Control Change Requiremen

LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET LSI1012XT1G FEATURES D TrenchFETr Power MOSFET 1.8-V Rated D Gate-Source ESD Protected 2000 V D High-Side Switching D Low On-Resistance 0.7 W D Low Threshold 0.8 V (typ) D Fast Switching Speed 10 ns SC-89 BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage Gate 1 D Low-Voltage Operation D High-Speed Circui

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