SIA445EDJT - описание и поиск аналогов

SiA445EDJT www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package 0.0167 at VGS = -4.5 V -12 a - Small footprint area -20 0.0185 at VGS = -3.7 V -12 a 22 nC - Low on-resistance 0.0310 at VGS = -2.5 V -12 a Ultra-thin 0.6 m

New Product SiA445EDJ Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.0165 at VGS = - 4.5 V - 12a Thermally Enhanced PowerPAK 0.0185 at VGS = - 3.7 V - 20 - 12a 23 nC SC-70 Package 0.0300 at VGS = - 2.5 V - Small

New Product SiA444DJT Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.017 at VGS = 10 V 12 TrenchFET Power MOSFET 30 5 nC New Thermally Enhanced PowerPAK 0.022 at VGS = 4.5 V 12 SC-70 Package - Small Footprint Area Thin PowerPAK SC-70-6L-Single -

SiA446DJ www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET technology optimizes balance VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) of RDS(on), Qg, Qsw and Qoss 0.177 at VGS = 10 V 7.7 100 % Rg and UIS tested 150 0.185 at VGS = 7.5 V 7.6 4.3 nC Material categorization 0.250 at VGS = 6 V 4 For definitions of compliance

New Product SiA443DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ) TrenchFET Power MOSFET 0.045 at VGS = - 4.5 V - 9a New Thermally Enhanced PowerPAK RoHS 0.063 at VGS = - 2.5 V - 20 - 9a 9 nC COMPLIANT SC-70 Package 0.088 at VGS = - 1.8 V - Small Footprint Area - 9a - Low On-Resis

SiA440DJ Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.026 at VGS = 10 V Material categorization 12 For definitions of compliance please see 0.028 at VGS = 4.5 V 12 40 6.9 nC www.vishay.com/doc?99912 0.029 at VGS = 3.7 V 12 0.035 at VGS =

SiA441DJ Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.047 at VGS = - 10 V - 12a Thermally Enhanced PowerPAK - 40 11 nC 0.065 at VGS = - 4.5 V SC-70 Package - 12a - Small Footprint Area - Low On-Resistance PowerPAK SC-70

New Product SiA447DJ Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package - Small Footprint Area 0.0135 at VGS = - 4.5 V - 12a - Low On-Resistance 0.0194 at VGS = - 2.5 V - 12a - 12 31 nC 100 % Rg Tested 0.0344 at VGS = - 1.8 V - 12a

New Product SiA448DJ Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) New Thermally Enhanced PowerPAK SC-70 Package 0.0150 at VGS = 4.5 V 12 - Small Footprint Area 0.0166 at VGS = 2.5 V 12 - Low On-Resistance 20 13 nC 0.0200 at VGS = 1.8 V 12 100 % Rg Tested 0.0324

SiA444DJT www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SC-70-6L