SIRA18ADP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SIRA18ADP
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 3.3 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.4 V
Максимально допустимый постоянный ток стока |Id|: 14.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 14.3 nC
Время нарастания (tr): 9 ns
Выходная емкость (Cd): 287 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0087 Ohm
Тип корпуса: SO-8
SIRA18ADP Datasheet (PDF)
sira18adp.pdf
SiRA18ADPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV power MOSFETVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested0.0087 at VGS = 10 V 30.630 6.9 nC Material categorization:0.0135 at VGS = 4.5 V 24.5for definitions of compliance please see PowerPAK SO-8 Singlewww.vishay.com/do
sira18dp.pdf
New ProductSiRA18DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0075 at VGS = 10 V Material categorization:3330 6.9 nCFor definitions of compliance please see0.0120 at VGS = 4.5 V 20.3www.vishay.com/doc?99912PowerPAK SO-8APP
sira14bdp.pdf
SiRA14BDPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 100 % Rg and UIS testedD 65 Material categorization:for definitions of compliance please see www.vishay.com/doc?9991212 SDAPPLICATIONS3 S4 S1 High power density DC/DCGTop View Bottom View Syn
sira14dp.pdf
New ProductSiRA14DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () Max.ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested0.00510 at VGS = 10 V Material categorization:2030 9.4 nCFor definitions of compliance please see0.00850 at VGS = 4.5 V 20www.vishay.com/doc?99912PowerPAK SO-8
sira10bdp.pdf
SiRA10BDPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 100 % Rg and UIS testedD 65 Material categorization:for definitions of compliance please see www.vishay.com/doc?9991212 SAPPLICATIONSD3 S4 S1 High power density DC/DCGTop View Bottom View Syn
sira12dp.pdf
New ProductSiRA12DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.)Definition TrenchFET Gen IV Power MOSFET0.0043 at VGS = 10 V 2530 13.6 nC 100 % Rg and UIS Tested0.0060 at VGS = 4.5 V 25 Compliant to RoHS Directive 2002/95/ECAPPLICAT
sira12bdp.pdf
SiRA12BDPwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK SO-8 SingleD TrenchFET Gen IV power MOSFETD 8D 7 100 % Rg and UIS testedD 65 Material categorization:for definitions of compliance please see www.vishay.com/doc?9991212 SAPPLICATIONSD3 S4 S1 High power density DC/DCGTop View Bottom View Syn
sira10dp.pdf
New ProductSiRA10DPVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen IV Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested0.0037 at VGS = 10 V 30g Material categorization:30 15.4 nCFor definitions of compliance please see0.0050 at VGS = 4.5 V 30gwww.vishay.com/doc?99912APPLICATIONS
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