10N60L-T2Q-T - аналоги и даташиты транзистора

 

10N60L-T2Q-T - Даташиты. Аналоги. Основные параметры


   Наименование производителя: 10N60L-T2Q-T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 156 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 69 ns
   Cossⓘ - Выходная емкость: 166 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
   Тип корпуса: TO-262
 

 Аналог (замена) для 10N60L-T2Q-T

   - подбор ⓘ MOSFET транзистора по параметрам

 

10N60L-T2Q-T Datasheet (PDF)

 6.1. Size:425K  utc
 10n60l-tf3t-t 10n60g-tf3t-t 10n60l- t2q-t 10n60g- t2q-t 10n60l-tq2-t 10n60g-tq2-t 10n60l-tq2-r 10n60g-tq2-r.pdf pdf_icon

10N60L-T2Q-T

UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin

 6.2. Size:425K  utc
 10n60l-ta3-t 10n60g-ta3-t 10n60l-tf3-t 10n60g-tf3-t 10n60l-tf1-t 10n60g-tf1-t 10n60l-tf2-t 10n60g-tf2-t.pdf pdf_icon

10N60L-T2Q-T

UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin

 8.1. Size:259K  aosemi
 aob10n60l.pdf pdf_icon

10N60L-T2Q-T

AOT10N60/AOB10N60/AOTF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT10N60 & AOB10N60 & AOTF10N60 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... 10N60L-TF3-T , 10N60G-TF3-T , 10N60L-TF1-T , 10N60G-TF1-T , 10N60L-TF2-T , 10N60G-TF2-T , 10N60L-TF3T-T , 10N60G-TF3T-T , 8205A , 10N60G-T2Q-T , 10N60L-TQ2-T , 10N60G-TQ2-T , 10N60L-TQ2-R , 10N60G-TQ2-R , 10N65KL-TA3-T , 10N65KG-TA3-T , 10N65KL-TF1-T .

History: STB20NM50 | FQA17N40 | 2N6770JANTX | AUIRFS6535 | BUK7Y2R5-40H | UPA2820T1S | STB80NF03L-04-1

 

 
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