Справочник MOSFET. 10N60L-T2Q-T

 

10N60L-T2Q-T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 10N60L-T2Q-T
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 156 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 10 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 69 ns
   Выходная емкость (Cd): 166 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.75 Ohm
   Тип корпуса: TO-262

 Аналог (замена) для 10N60L-T2Q-T

 

 

10N60L-T2Q-T Datasheet (PDF)

 6.1. Size:425K  utc
10n60l-tf3t-t 10n60g-tf3t-t 10n60l- t2q-t 10n60g- t2q-t 10n60l-tq2-t 10n60g-tq2-t 10n60l-tq2-r 10n60g-tq2-r.pdf

10N60L-T2Q-T
10N60L-T2Q-T

UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin

 6.2. Size:425K  utc
10n60l-ta3-t 10n60g-ta3-t 10n60l-tf3-t 10n60g-tf3-t 10n60l-tf1-t 10n60g-tf1-t 10n60l-tf2-t 10n60g-tf2-t.pdf

10N60L-T2Q-T
10N60L-T2Q-T

UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin

 8.1. Size:259K  aosemi
aob10n60l.pdf

10N60L-T2Q-T
10N60L-T2Q-T

AOT10N60/AOB10N60/AOTF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT10N60 & AOB10N60 & AOTF10N60 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

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History: RJK0602DPN-E0

 

 
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