10N60G-T2Q-T Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 10N60G-T2Q-T
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 156 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 69 ns
Cossⓘ - Выходная емкость: 166 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.75 Ohm
Тип корпуса: TO-262
Аналог (замена) для 10N60G-T2Q-T
10N60G-T2Q-T Datasheet (PDF)
10n60l-tf3t-t 10n60g-tf3t-t 10n60l- t2q-t 10n60g- t2q-t 10n60l-tq2-t 10n60g-tq2-t 10n60l-tq2-r 10n60g-tq2-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin
10n60l-ta3-t 10n60g-ta3-t 10n60l-tf3-t 10n60g-tf3-t 10n60l-tf1-t 10n60g-tf1-t 10n60l-tf2-t 10n60g-tf2-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin
mdf10n60gth mdp10n60gth.pdf

MDP10N60G/MDF10N60G N-Channel MOSFET 600V, 10A, 0.7General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- VDS = 660V @ Tjmax state resistance, high switching performance and excellent ID = 10A @ VGS = 10V quality. RDS(ON) 0.7 @ VGS = 10V Applications These devices are suitabl
t10n60gp.pdf

CHENMKO ENTERPRISE CO.,LTDT10N60GPSURFACE MOUNT NPN Silicon Transistor VOLTAGE 60Volts CURRENT 10 AmpereAPPLICATION* General purpose applications.* Other switching applications.TO-220FEATURE* Package. (TO-220)* DC Current Gain Specified to Ic=10A( ).187 4.7( ).148 3.8( ).153 3.9* High Current Gain-Bandwidth Product : fT=2MHz (Min.) .413 10.5( ).108( )
Другие MOSFET... 10N60G-TF3-T , 10N60L-TF1-T , 10N60G-TF1-T , 10N60L-TF2-T , 10N60G-TF2-T , 10N60L-TF3T-T , 10N60G-TF3T-T , 10N60L-T2Q-T , 12N60 , 10N60L-TQ2-T , 10N60G-TQ2-T , 10N60L-TQ2-R , 10N60G-TQ2-R , 10N65KL-TA3-T , 10N65KG-TA3-T , 10N65KL-TF1-T , 10N65KG-TF1-T .
History: HM3415E | 2N65KL-TF3T-T | HAT3008RJ | IRFZ44VZPBF | 2SK2025 | IRF6619 | NCE0140AK2
History: HM3415E | 2N65KL-TF3T-T | HAT3008RJ | IRFZ44VZPBF | 2SK2025 | IRF6619 | NCE0140AK2



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