12N10G-S08-R. Аналоги и основные параметры

Наименование производителя: 12N10G-S08-R

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 90 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm

Тип корпуса: SOP-8

Аналог (замена) для 12N10G-S08-R

- подборⓘ MOSFET транзистора по параметрам

 

12N10G-S08-R даташит

 ..1. Size:234K  utc
 12n10l-ta3-t 12n10g-ta3-t 12n10l-tm3-t 12n10g-tm3-t 12n10l-tn3-r 12n10g-tn3-r 12n10g-s08-r.pdf pdf_icon

12N10G-S08-R

UNISONIC TECHNOLOGIES CO., LTD 12N10 Power MOSFET 12A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N10 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with minimum on-state resistance for extremely high dense cell design, rugged avalanche characteristics and less critical alignment steps. FEATURES * RDS(on)

 7.1. Size:953K  belling
 blp12n10g-e.pdf pdf_icon

12N10G-S08-R

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 11 A D

 7.2. Size:1135K  belling
 blp12n10g-b blp12n10g-p.pdf pdf_icon

12N10G-S08-R

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifier and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 55 A D

 7.3. Size:984K  belling
 blp12n10g-q.pdf pdf_icon

12N10G-S08-R

BLP12N10G Step-Down Converter , 1 Description BLP12N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 50 A D

ПОКАЗАТЬ ЕЩЁ

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