12N70KL-TM3-T - описание и поиск аналогов

UNISONIC TECHNOLOGIES CO., LTD 12N70K-MT Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70K-MT are N-Channel enhancement mode power MOSFET which are produced using UTC s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching perfo

UNISONIC TECHNOLOGIES CO., LTD 12N70K-MT Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70K-MT are N-Channel enhancement mode power MOSFET which are produced using UTC s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching perfo

Preliminary Technical Information X2-Class VDSS = 700V IXTA12N70X2 Power MOSFET ID25 = 12A IXTP12N70X2 RDS(on) 300m IXTH12N70X2 N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 700 V VDGR TJ = 25 C to 150 C, RGS = 1M 700 V VGSS Continuous 30 V

UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power MOSFET which are produced using UTC s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance

UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-220F DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power MOSFET which are produced using UTC s proprietary, planar 1 stripe, DMOS technology. 1 These devices are suited for high efficiency switch mode power TO-220F1 TO-220F2 supply. To minimize on-state res

Silicon N-Channel Power MOSFET R CS12N70 A8H VDSS 700 V General Description ID 12 A CS12N70 A8H, the silicon N-channel Enhanced PD (TC=25 ) 140 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.64 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

WFF12N70S WFF12N70S WFF12N70S WFF12N70S 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET 700V Super-Junction Power MOSFET Features Ultra low Rdson Ultra low gate charge (typ. Qg = 34nC) 100% UIS tested RoHS compliant Maximum Junction Temperature Range(150 ) General Description Power MOSFET is fabricated using

BL12N70 Power MOSFET 1 Description Step-Down Converter BL12N70, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par

SW12N70D N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFET TO-220FT TO-220SF Features TO-220F TO-262 BVDSS 700V ID 12A High ruggedness Low RDS(ON) (Typ 0.75 )@VGS=10V RDS(ON) 0.75 Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 1 2 2 2 2 3 3 3 Application LED, PC Power, Char

SW12N70D N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFET TO-220FT TO-220SF Features TO-220F TO-262 BVDSS 700V ID 12A High ruggedness Low RDS(ON) (Typ 0.75 )@VGS=10V RDS(ON) 0.75 Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 1 2 2 2 2 3 3 3 3 Application LED, PC Power,

QM12N70F 1 2011-09-09 - 1 - N-Ch 700V Fast Switching MOSFETs General Description Product Summery The QM12N70F is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 700V 1 12A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM12N70F meet

FIR12N70FG 700V N-Channel MOSFET-G PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg= 44nC (Typ.). BVDSS=700V,ID=12A G DS RDS(on) 0.75 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Loc

Isc N-Channel MOSFET Transistor IXTA12N70X2 FEATURES With TO-263(D2PAK) packaging Low gate charge High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta