12P10G-TMS4-T. Аналоги и основные параметры

Наименование производителя: 12P10G-TMS4-T

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 9.4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 64 ns

Cossⓘ - Выходная емкость: 115 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm

Тип корпуса: TO-251S

Аналог (замена) для 12P10G-TMS4-T

- подборⓘ MOSFET транзистора по параметрам

 

12P10G-TMS4-T даташит

 ..1. Size:300K  utc
 12p10l-tn3-r 12p10g-tn3-r 12p10l-tnd-r 12p10g-tnd-r 12p10l-tq2-r 12p10g-tq2-r 12p10l-tq2-t 12p10g-tq2-t 12p10g-s08-r 12p10g-tms4-t.pdf pdf_icon

12P10G-TMS4-T

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET 9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converte

 ..2. Size:329K  utc
 12p10l-tms4-t 12p10g-tms4-t 12p10l-tn3-r 12p10g-tn3-r 12p10l-tnd-r 12p10g-tnd-r 12p10l-tq2-r 12p10g-tq2-r 12p10l-tq2-t 12p10g-tq2-t.pdf pdf_icon

12P10G-TMS4-T

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET -9.4A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC conver

 4.1. Size:300K  utc
 12p10g-aa3-r 12p10l-ta3-t 12p10g-ta3-t 12p10l-tm3-t 12p10g-tm3-t 12p10l-tms-t 12p10g-tms-t 12p10l-tms2-t 12p10g-tms2-t 12p10l-tms4-t.pdf pdf_icon

12P10G-TMS4-T

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET 9.4A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC converte

 4.2. Size:329K  utc
 12p10g-aa3-r 12p10l-ta3-t 12p10g-ta3-t 12p10l-tm3-t 12p10g-tm3-t 12p10l-tms-t 12p10g-tms-t 12p10l-tms2-t 12p10g-tms2-t 12p10g-s08-r.pdf pdf_icon

12P10G-TMS4-T

UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET -9.4A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC conver

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... 12P10L-TM3-T, 12P10G-TM3-T, 12P10L-TMS-T, 12P10G-TMS-T, 12P10L-TMS2-T, 12P10G-TMS2-T, 12P10G-S08-R, 12P10L-TMS4-T, 5N60, 12P10L-TN3-R, 12P10G-TN3-R, 12P10L-TND-R, 12P10G-TND-R, 12P10L-TQ2-R, 12P10G-TQ2-R, 12P10L-TQ2-T, 12P10G-TQ2-T