17P10L-TF3-T - параметры транзистора MOSFET, его аналоги, datasheet

17P10L-TF3-T Datasheet (PDF)

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17p10l-ta3-t 17p10g-ta3-t 17p10l-tf1-t 17p10g-tf1-t 17p10l-tf2-t 17p10g-tf2-t 17p10l-tf3-t 17p10g-tf3-t 17p10l-tm3-t 17p10g-tm3-t 17p10l-tn3-r 17p10g-tn3-r.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 17P10 Power MOSFET -17A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The 17P10 uses advanced proprietary, planar stripe, DMOStechnology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable to be used in low voltage applications such as audio amplifier, high efficiency switching DC/DC convert

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fqp17p10.pdf pdf_icon

TMQFETFQP17P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -16.5A, -100V, RDS(on) = 0.19 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored to

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TMQFETFQAF17P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -12.4A, -100V, RDS(on) = 0.19 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored to

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fqb17p10tm.pdf pdf_icon

TMQFETFQB17P10 / FQI17P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -16.5A, -100V, RDS(on) = 0.19 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tail