19N10L-TF1-T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 19N10L-TF1-T
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 38 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 15.6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 19 nC
Время нарастания (tr): 70 ns
Выходная емкость (Cd): 165 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.1 Ohm
Тип корпуса: TO-220F
Аналог (замена) для 19N10L-TF1-T
19N10L-TF1-T Datasheet (PDF)
19n10l-t3p-t 19n10g-t3p-t 19n10l-ta3-t 19n10g-ta3-t 19n10l-tf3-t 19n10g-tf3-t 19n10l-tf1-t 19n10g-tf1-t 19n10l-tm3-t 19n10g-tm3-t 19n10l-tms-t.pdf
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UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTCs planar stripe, DMOS technology which has been tailored especially in theavalanche and commutation mode to minimize on-stateresistance, provide superior switching performance,
19n10l-tms2-t 19n10g-tms2-t 19n10l-tms4-t 19n10g-tms4-t 19n10l-tn3-r 19n10g-tn3-r 19n10l-tq2-r 19n10g-tq2-r 19n10l-tq2-t 19n10g-tq2-t 19n10g-tms-t.pdf
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UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTCs planar stripe, DMOS technology which has been tailored especially in theavalanche and commutation mode to minimize on-stateresistance, provide superior switching performance,
fqb19n10ltm.pdf
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August 2000TMQFETQFETQFETQFETFQB19N10L / FQI19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced tec
fqp19n10l.pdf
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August 2000TMQFETQFETQFETQFETFQP19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has
fqd19n10ltf fqd19n10ltm fqd19n10l fqu19n10l.pdf
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January 2009QFETFQD19N10L / FQU19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been
fqpf19n10l.pdf
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August 2000TMQFETQFETQFETQFETFQPF19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology h
wmq119n10lg2.pdf
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WMQ119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ119N10LG2 uses Wayon's 2nd generation power trench MOSFET SGtechnology that has been especially tailored to minimize the on-state SSSSGSresistance and yet maintain superior switching performance. This PDFN3030-8Ldevice is well suited for high efficiency fast switching ap
wmp119n10lg2.pdf
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WMP119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMP119N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. Features V = 100V, I = 55A DS DR
wmb119n10lg2.pdf
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WMB119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB119N10LG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN50
wms119n10lg2.pdf
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WMS119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS119N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications.SOP-8LFeatures
fqd19n10l.pdf
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FQD19N10Lwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
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