19N10L-TM3-T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 19N10L-TM3-T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15.6 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 19 nC
trⓘ - Время нарастания: 70 ns
Cossⓘ - Выходная емкость: 165 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: TO-251
Аналог (замена) для 19N10L-TM3-T
19N10L-TM3-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTCs planar stripe, DMOS technology which has been tailored especially in theavalanche and commutation mode to minimize on-stateresistance, provide superior switching performance,
fqb19n10ltm.pdf
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fqpf19n10l.pdf
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wmq119n10lg2.pdf
WMQ119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ119N10LG2 uses Wayon's 2nd generation power trench MOSFET SGtechnology that has been especially tailored to minimize the on-state SSSSGSresistance and yet maintain superior switching performance. This PDFN3030-8Ldevice is well suited for high efficiency fast switching ap
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wms119n10lg2.pdf
WMS119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS119N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications.SOP-8LFeatures
fqd19n10l.pdf
FQD19N10Lwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
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Список транзисторов
Обновления
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