19N10L-TMS4-T. Аналоги и основные параметры

Наименование производителя: 19N10L-TMS4-T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 15.6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 70 ns

Cossⓘ - Выходная емкость: 165 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm

Тип корпуса: TO-251S

Аналог (замена) для 19N10L-TMS4-T

- подборⓘ MOSFET транзистора по параметрам

 

19N10L-TMS4-T даташит

 ..1. Size:327K  utc
 19n10l-tms2-t 19n10g-tms2-t 19n10l-tms4-t 19n10g-tms4-t 19n10l-tn3-r 19n10g-tn3-r 19n10l-tq2-r 19n10g-tq2-r 19n10l-tq2-t 19n10g-tq2-t 19n10g-tms-t.pdf pdf_icon

19N10L-TMS4-T

UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance,

 4.1. Size:327K  utc
 19n10l-t3p-t 19n10g-t3p-t 19n10l-ta3-t 19n10g-ta3-t 19n10l-tf3-t 19n10g-tf3-t 19n10l-tf1-t 19n10g-tf1-t 19n10l-tm3-t 19n10g-tm3-t 19n10l-tms-t.pdf pdf_icon

19N10L-TMS4-T

UNISONIC TECHNOLOGIES CO., LTD 19N10 Power MOSFET 15.6A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance,

 8.1. Size:611K  fairchild semi
 fqb19n10ltm.pdf pdf_icon

19N10L-TMS4-T

August 2000 TM QFET QFET QFET QFET FQB19N10L / FQI19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced tec

 8.2. Size:626K  fairchild semi
 fqp19n10l.pdf pdf_icon

19N10L-TMS4-T

August 2000 TM QFET QFET QFET QFET FQP19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has

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