1N60L-TA3-T - аналоги и даташиты транзистора

 

1N60L-TA3-T - Даташиты. Аналоги. Основные параметры


   Наименование производителя: 1N60L-TA3-T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1.2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 20 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 11.5 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для 1N60L-TA3-T

   - подбор ⓘ MOSFET транзистора по параметрам

 

1N60L-TA3-T Datasheet (PDF)

 ..1. Size:361K  utc
 1n60g-aa3-r 1n60l-ta3-t 1n60g-ta3-t 1n60l-tf2-t 1n60g-tf2-t 1n60l-tf3-t 1n60g-tf3-t 1n60l-tm3-t 1n60g-tm3-t.pdf pdf_icon

1N60L-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

 ..2. Size:453K  utc
 1n60l-aa3-r 1n60g-aa3-r 1n60l-ta3-t 1n60g-ta3-t 1n60l-tf2-t 1n60g-tf2-t 1n60l-tf3-t 1n60g-tf3-t 1n60l-tm3-t 1n60g-tm3-t 1n60l-tms-t 1n60g-tms-t 1n60g-t92-k.pdf pdf_icon

1N60L-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

 7.1. Size:361K  utc
 1n60l-tms2-t 1n60g-tms2-t 1n60l-tms4-t 1n60g-tms4-t 1n60l-tn3-r 1n60g-tn3-r 1n60l-tnd-r 1n60g-tnd-r.pdf pdf_icon

1N60L-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

 7.2. Size:361K  utc
 1n60l-t92-b 1n60g-t92-b 1n60l-t92-k 1n60g-t92-k 1n60l-tms-t 1n60g-tms-t 1n60l-t60-k 1n60g-t60-k.pdf pdf_icon

1N60L-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... 19N10L-TN3-R , 19N10G-TN3-R , 19N10L-TQ2-R , 19N10G-TQ2-R , 19N10L-TQ2-T , 19N10G-TQ2-T , 19N10G-TMS-T , 1N60G-AA3-R , 13N50 , 1N60G-TA3-T , 1N60L-TF2-T , 1N60G-TF2-T , 1N60L-TF3-T , 1N60G-TF3-T , 1N60G-TM3-T , 1N60L-AA3-R , 1N60L-AB3-R .

History: 1N65L-AA3-R | 1N65L-TN3-R | 1N60G-TMS-T | 20N70KG-TF2-T | 24NM60L-TF2-T | SI3403 | 19N10G-TMS-T

 

 
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