Справочник MOSFET. FDD8444LF085

 

FDD8444LF085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDD8444LF085
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 153 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0052 Ohm
   Тип корпуса: TO252 DPAK

 Аналог (замена) для FDD8444LF085

 

 

FDD8444LF085 Datasheet (PDF)

 6.1. Size:388K  fairchild semi
 fdd8444l f085.pdf

FDD8444LF085 FDD8444LF085

January 2009FDD8444L_F085tmN-Channel PowerTrench MOSFET 40V, 50A, 6.0m ApplicationsFeatures Typ rDS(on) = 3.8m at VGS = 5V, ID = 50A Automotive Engine Control Typ Qg(tot) = 46nC at VGS = 5V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Po

 6.2. Size:816K  onsemi
 fdd8444l-f085.pdf

FDD8444LF085 FDD8444LF085

FDD8444L-F085N-Channel PowerTrench MOSFET40V, 50A, 6.0m ApplicationsFeatures Typ rDS(on) = 3.8m at VGS = 5V, ID = 50A Automotive Engine Control Typ Qg(tot) = 46nC at VGS = 5V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architecture an

 7.1. Size:311K  fairchild semi
 fdd8444 f085.pdf

FDD8444LF085 FDD8444LF085

October 2010FDD8444_F085N-Channel PowerTrench MOSFET 40V, 50A, 5.2m ApplicationsFeatures Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Arch

 7.2. Size:309K  fairchild semi
 fdd8444.pdf

FDD8444LF085 FDD8444LF085

June 2007FDD8444tmN-Channel PowerTrench MOSFET 40V, 50A, 5.2m ApplicationsFeatures Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architec

 7.3. Size:467K  onsemi
 fdd8444.pdf

FDD8444LF085 FDD8444LF085

March 2015FDD8444N-Channel PowerTrench MOSFET 40V, 50A, 5.2m ApplicationsFeatures Typ rDS(on) = 4m at VGS = 10V, ID = 50A Automotive Engine Control Typ Qg(10) = 89nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architectur

 7.4. Size:835K  cn vbsemi
 fdd8444-nl.pdf

FDD8444LF085 FDD8444LF085

FDD8444-NLwww.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC0.0065 at VGS = 4.5 V 70APPLICATIONS Synchronous Rectification Power SuppliesDTO-252 GG D S SN-Channel MOSFETABSOLUTE MAXIMUM

 7.5. Size:287K  inchange semiconductor
 fdd8444.pdf

FDD8444LF085 FDD8444LF085

isc N-Channel MOSFET Transistor FDD8444FEATURESDrain Current : I =155A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =5.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Другие MOSFET... STT03L03 , FDD7N25LZ , FDD8424H , STT02N20 , FDD8424HF085 , STT02N10 , FDD8444 , FDD8444F085 , AON7408 , FDD8445 , FDD8445F085 , FDD8447L , FDD8447LF085 , FDD8451 , FDD8453LZ , FDD8453LZF085 , FDD850N10L .

 

 
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