Справочник MOSFET. 25N10G-TF3-T

 

25N10G-TF3-T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 25N10G-TF3-T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 28 ns
   Cossⓘ - Выходная емкость: 270 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для 25N10G-TF3-T

   - подбор ⓘ MOSFET транзистора по параметрам

 

25N10G-TF3-T Datasheet (PDF)

 ..1. Size:225K  utc
25n10l-tf1-t 25n10g-tf1-t 25n10l-tf2-t 25n10g-tf2-t 25n10l-tf3-t 25n10g-tf3-t 25n10l-tm3-t 25n10g-tm3-t 25n10l-tn3-r 25n10g-tn3-r.pdfpdf_icon

25N10G-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 25N10 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTCs perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is generally suitable for all commercial-industrial applicati

 8.1. Size:238K  ape
ap25n10gh.pdfpdf_icon

25N10G-TF3-T

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionAP25N10 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possible on-resistance andDS

 8.2. Size:100K  ape
ap25n10gp-hf ap25n10gs-hf.pdfpdf_icon

25N10G-TF3-T

AP25N10GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 23AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GTO-220

 8.3. Size:100K  ape
ap25n10gh-hf ap25n10gj-hf.pdfpdf_icon

25N10G-TF3-T

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design

Другие MOSFET... 24NM60L-T47-T , 24NM60G-T47-T , 24NM60L-T47S-T , 25N10L-TF1-T , 25N10G-TF1-T , 25N10L-TF2-T , 25N10G-TF2-T , 25N10L-TF3-T , 2SK3568 , 25N10L-TM3-T , 25N10G-TM3-T , 25N10L-TN3-R , 25N10G-TN3-R , 2N60L-T2Q-T , 2N60G-T2Q-T , 2N60L-T60-K , 2N60G-T60-K .

History: STP4NK50ZD | PQ5U2JN | IPT60R028G7 | FDZ7296 | IXTH1N200P3 | NCE60P04R | NCE60H10

 

 
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