25N10G-TM3-T Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 25N10G-TM3-T
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 41 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 28 ns
Cossⓘ - Выходная емкость: 270 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
Тип корпуса: TO-251
Аналог (замена) для 25N10G-TM3-T
25N10G-TM3-T Datasheet (PDF)
25n10l-tf1-t 25n10g-tf1-t 25n10l-tf2-t 25n10g-tf2-t 25n10l-tf3-t 25n10g-tf3-t 25n10l-tm3-t 25n10g-tm3-t 25n10l-tn3-r 25n10g-tn3-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 25N10 Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTCs perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is generally suitable for all commercial-industrial applicati
ap25n10gh.pdf

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionAP25N10 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowest possible on-resistance andDS
ap25n10gp-hf ap25n10gs-hf.pdf

AP25N10GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS 100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID 23AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching, GTO-220
ap25n10gh-hf ap25n10gj-hf.pdf

AP25N10GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 100V Single Drive Requirement RDS(ON) 80m RoHS Compliant & Halogen-Free ID 23AGSDescriptionGAdvanced Power MOSFETs from APEC provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design
Другие MOSFET... 24NM60L-T47S-T , 25N10L-TF1-T , 25N10G-TF1-T , 25N10L-TF2-T , 25N10G-TF2-T , 25N10L-TF3-T , 25N10G-TF3-T , 25N10L-TM3-T , IRF9540N , 25N10L-TN3-R , 25N10G-TN3-R , 2N60L-T2Q-T , 2N60G-T2Q-T , 2N60L-T60-K , 2N60G-T60-K , 2N60L-T6C-K , 2N60G-T6C-K .
History: HMS50N15LD | BRCS3134ZK | IPB60R125CP | 2SK807 | IPB60R360CFD7 | PMN25ENEA | IRF2804S-7PPBF
History: HMS50N15LD | BRCS3134ZK | IPB60R125CP | 2SK807 | IPB60R360CFD7 | PMN25ENEA | IRF2804S-7PPBF



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
2sc897 datasheet | 2sd389 | mp41 transistor | nkt275 datasheet | 2sd947 | a763 transistor | fhp40n20 | 2n3035 transistor