Справочник MOSFET. FDD8453LZ

 

FDD8453LZ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDD8453LZ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 65 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0067 Ohm
   Тип корпуса: TO252 DPAK

 Аналог (замена) для FDD8453LZ

 

 

FDD8453LZ Datasheet (PDF)

 ..1. Size:411K  fairchild semi
fdd8453lz f085.pdf

FDD8453LZ
FDD8453LZ

Aug 2012FDD8453LZ_F085N-Channel Power Trench MOSFET40V, 50A, 6.5m Features Typ rDS(on) = 5m at VGS = 10V, ID = 15AGeneral Description Typ rDS(on) = 6m at VGS = 4.5V, ID = 13AThis N-Channel MOSFET is produced using Fairchild HBM ESD protection level > 7kv typicalSemiconductors advanced PowerTrench process that RoHS Complianthas been especially tailored to mi

 ..2. Size:277K  fairchild semi
fdd8453lz.pdf

FDD8453LZ
FDD8453LZ

September 2007FDD8453LZtmN-Channel PowerTrench MOSFET 40V, 50A, 6.7mFeatures General Description Max rDS(on) = 6.7m at VGS = 10V, ID = 15A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 8.7m at VGS = 4.5V, ID = 13Abeen especially tailored to minimize the on-state resistance and HBM ESD pro

 ..3. Size:288K  inchange semiconductor
fdd8453lz.pdf

FDD8453LZ
FDD8453LZ

isc N-Channel MOSFET Transistor FDD8453LZFEATURESDrain Current : I =50A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =6.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 0.1. Size:417K  onsemi
fdd8453lz-f085.pdf

FDD8453LZ
FDD8453LZ

FDD8453LZ-F085N-Channel Power Trench MOSFET40V, 50A, 6.5mFeatures Typ rDS(on) = 5m at VGS = 10V, ID = 15AGeneral DescriptionThis N-Channel MOSFET is produced using ON Typ rDS(on) = 6m at VGS = 4.5V, ID = 13ASemiconductors advanced PowerTrench process that HBM ESD protection level > 7kv typicalhas been especially tailored to minimize the RoHS Complianton-s

 8.1. Size:225K  fairchild semi
fdd8451.pdf

FDD8453LZ
FDD8453LZ

May 2009FDD8451tmN-Channel PowerTrench MOSFET 40V, 28A, 24mFeatures General Description Max rDS(on) 24m at VGS = 10V, ID = 9A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) 30m at VGS = 4.5V, ID = 7A either synchronous or conventional switching PWM controllers. It has been optimized

 8.2. Size:288K  inchange semiconductor
fdd8451.pdf

FDD8453LZ
FDD8453LZ

isc N-Channel MOSFET Transistor FDD8451FEATURESDrain Current : I =28A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =24m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

Другие MOSFET... FDD8444 , FDD8444F085 , FDD8444LF085 , FDD8445 , FDD8445F085 , FDD8447L , FDD8447LF085 , FDD8451 , SPP20N60C3 , FDD8453LZF085 , FDD850N10L , STT02N07 , FDD86102 , STT01N20 , FDD86102LZ , STT01L10 , FDD86250 .

 

 
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