Справочник MOSFET. 2N60G-TND-R

 

2N60G-TND-R Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 2N60G-TND-R
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 44 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 45 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для 2N60G-TND-R

   - подбор ⓘ MOSFET транзистора по параметрам

 

2N60G-TND-R Datasheet (PDF)

 ..1. Size:289K  utc
 2n60l-tn3-r 2n60g-tn3-r 2n60l-tnd-r 2n60g-tnd-r 2n60l-t2q-t 2n60g-t2q-t 2n60l-t60-k 2n60g-t60-k 2n60l-t6c-k 2n60g-t6c-k 2n60l-k08-5060-r.pdf pdf_icon

2N60G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

 ..2. Size:291K  utc
 2n60l-t2q-t 2n60g-t2q-t 2n60l-t60-k 2n60g-t60-k 2n60l-t6c-k 2n60g-t6c-k 2n60g-e-k08-5060-r 2n60g-tm3-t 2n60g-tnd-r.pdf pdf_icon

2N60G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati

 ..3. Size:278K  utc
 2n60l-tms4-t 2n60g-tms4-t 2n60l-tn3-r 2n60g-tn3-r 2n60l-tnd-r 2n60g-tnd-r 2n60l-k08-5060-r 2n60g-k08-5060-r.pdf pdf_icon

2N60G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 2N60-CB Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appli

 6.1. Size:291K  utc
 2n60l-tma-t 2n60g-tma-t 2n60l-tms-t 2n60g-tms-t 2n60l-tms2-t 2n60g-tms2-t 2n60l-tms4-t 2n60g-tms4-t 2n60l-tn3-r 2n60g-tn3-r 2n60l-tnd-r.pdf pdf_icon

2N60G-TND-R

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... 2N60L-T2Q-T , 2N60G-T2Q-T , 2N60L-T60-K , 2N60G-T60-K , 2N60L-T6C-K , 2N60G-T6C-K , 2N60G-E-K08-5060-R , 2N60G-TM3-T , IRFP450 , 2N60L-T60-T , 2N60G-T60-T , 2N60L-AA3-R , 2N60G-AA3-R , 2N60L-TA3-T , 2N60G-TA3-T , 2N60L-TF3-T , 2N60G-TF3-T .

History: FDU6680 | CSD17301Q5A

 

 
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