2N60G-TF1-T - описание и поиск аналогов

 

Аналоги 2N60G-TF1-T. Основные параметры


   Наименование производителя: 2N60G-TF1-T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 24 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 36 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 4.6 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для 2N60G-TF1-T

   - подбор ⓘ MOSFET транзистора по параметрам

 

2N60G-TF1-T даташит

 ..1. Size:291K  utc
 2n60l-ta3-t 2n60g-ta3-t 2n60l-tf1-t 2n60g-tf1-t 2n60l-tf2-t 2n60g-tf2-t 2n60l-tf3-t 2n60g-tf3-t 2n60l-tf3t-t 2n60g-tf3t-t 2n60l-tm3-t.pdf pdf_icon

2N60G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati

 ..2. Size:289K  utc
 2n60l-ta3-t 2n60g-ta3-t 2n60l-tf1-t 2n60g-tf1-t 2n60l-tf2-t 2n60g-tf2-t 2n60l-tf3-t 2n60g-tf3-t 2n60l-tf3t-t 2n60g-tf3t-t 2n60g-k08-5060-r.pdf pdf_icon

2N60G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

 ..3. Size:278K  utc
 2n60l-t60-t 2n60g-t60-t 2n60l-aa3-r 2n60g-aa3-r 2n60l-ta3-t 2n60g-ta3-t 2n60l-tf3-t 2n60g-tf3-t 2n60l-tf1-t 2n60g-tf1-t.pdf pdf_icon

2N60G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 2N60-CB Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appli

 0.1. Size:379K  utc
 12n60l-ta3-t 12n60g-ta3-t 12n60l-tf1-t 12n60g-tf1-t 12n60l-tf2-t 12n60g-tf2-t 12n60l-tf3-t 12n60g-tf3-t 12n60l-t2q-t 12n60g-t2q-t 12n60l-t3p-t 12n60g-t3p-t.pdf pdf_icon

2N60G-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide supe

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Другие MOSFET... 2N60G-T60-T , 2N60L-AA3-R , 2N60G-AA3-R , 2N60L-TA3-T , 2N60G-TA3-T , 2N60L-TF3-T , 2N60G-TF3-T , 2N60L-TF1-T , 2SK3568 , 2N60L-TF2-T , 2N60G-TF2-T , 2N60L-TF3T-T , 2N60G-TF3T-T , 2N60G-K08-5060-R , 2N60L-TM3-T , 2N60L-TMS-T , 2N60G-TMS-T .

History: AGM1405F | FDC5661N-F085 | IRLML2803PBF | AGM13T05A

 

 
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