2N60G-TMS2-T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2N60G-TMS2-T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 44 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 19 nC
trⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 36 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4.6 Ohm
Тип корпуса: TO-251S2
Аналог (замена) для 2N60G-TMS2-T
2N60G-TMS2-T Datasheet (PDF)
2n60l-tm3-t 2n60g-tm3-t 2n60l-tma-t 2n60g-tma-t 2n60l-tms-t 2n60g-tms-t 2n60l-tms2-t 2n60g-tms2-t 2n60l-tms4-t 2n60g-tms4-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application
2n60l-tf2-t 2n60g-tf2-t 2n60l-tf3t-t 2n60g-tf3t-t 2n60l-tm3-t 2n60g-tm3-t 2n60l-tms-t 2n60g-tms-t 2n60l-tms2-t 2n60g-tms2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60-CB Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appli
2n60l-tma-t 2n60g-tma-t 2n60l-tms-t 2n60g-tms-t 2n60l-tms2-t 2n60g-tms2-t 2n60l-tms4-t 2n60g-tms4-t 2n60l-tn3-r 2n60g-tn3-r 2n60l-tnd-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati
2n60l-tms4-t 2n60g-tms4-t 2n60l-tn3-r 2n60g-tn3-r 2n60l-tnd-r 2n60g-tnd-r 2n60l-k08-5060-r 2n60g-k08-5060-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60-CB Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appli
2n60l-t2q-t 2n60g-t2q-t 2n60l-t60-k 2n60g-t60-k 2n60l-t6c-k 2n60g-t6c-k 2n60g-e-k08-5060-r 2n60g-tm3-t 2n60g-tnd-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati
2n60l-ta3-t 2n60g-ta3-t 2n60l-tf1-t 2n60g-tf1-t 2n60l-tf2-t 2n60g-tf2-t 2n60l-tf3-t 2n60g-tf3-t 2n60l-tf3t-t 2n60g-tf3t-t 2n60l-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati
2n60l-tn3-r 2n60g-tn3-r 2n60l-tnd-r 2n60g-tnd-r 2n60l-t2q-t 2n60g-t2q-t 2n60l-t60-k 2n60g-t60-k 2n60l-t6c-k 2n60g-t6c-k 2n60l-k08-5060-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application
2n60l-ta3-t 2n60g-ta3-t 2n60l-tf1-t 2n60g-tf1-t 2n60l-tf2-t 2n60g-tf2-t 2n60l-tf3-t 2n60g-tf3-t 2n60l-tf3t-t 2n60g-tf3t-t 2n60g-k08-5060-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application
12n60l-ta3-t 12n60g-ta3-t 12n60l-tf1-t 12n60g-tf1-t 12n60l-tf2-t 12n60g-tf2-t 12n60l-tf3-t 12n60g-tf3-t 12n60l-t2q-t 12n60g-t2q-t 12n60l-t3p-t 12n60g-t3p-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced usingUTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide supe
2n60l-t60-t 2n60g-t60-t 2n60l-aa3-r 2n60g-aa3-r 2n60l-ta3-t 2n60g-ta3-t 2n60l-tf3-t 2n60g-tf3-t 2n60l-tf1-t 2n60g-tf1-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60-CB Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appli
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
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