2N60G-TN3-R - Даташиты. Аналоги. Основные параметры
Наименование производителя: 2N60G-TN3-R
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 44 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 45 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: TO-252
Аналог (замена) для 2N60G-TN3-R
2N60G-TN3-R Datasheet (PDF)
2n60l-tn3-r 2n60g-tn3-r 2n60l-tnd-r 2n60g-tnd-r 2n60l-t2q-t 2n60g-t2q-t 2n60l-t60-k 2n60g-t60-k 2n60l-t6c-k 2n60g-t6c-k 2n60l-k08-5060-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application
2n60l-tma-t 2n60g-tma-t 2n60l-tms-t 2n60g-tms-t 2n60l-tms2-t 2n60g-tms2-t 2n60l-tms4-t 2n60g-tms4-t 2n60l-tn3-r 2n60g-tn3-r 2n60l-tnd-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati
2n60l-tms4-t 2n60g-tms4-t 2n60l-tn3-r 2n60g-tn3-r 2n60l-tnd-r 2n60g-tnd-r 2n60l-k08-5060-r 2n60g-k08-5060-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60-CB Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appli
2n60l-t2q-t 2n60g-t2q-t 2n60l-t60-k 2n60g-t60-k 2n60l-t6c-k 2n60g-t6c-k 2n60g-e-k08-5060-r 2n60g-tm3-t 2n60g-tnd-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati
Другие MOSFET... 2N60G-TMS-T , 2N60L-TMS2-T , 2N60G-TMS2-T , 2N60L-TMA-T , 2N60G-TMA-T , 2N60L-TMS4-T , 2N60G-TMS4-T , 2N60L-TN3-R , AO3400A , 2N60L-TND-R , 2N60L-K08-5060-R , 2N65G-AA3-R , 2N65L-TA3-T , 2N65G-TA3-T , 2N65L-TF3-T , 2N65G-TF3-T , 2N65L-TF1-T .
History: 2N65G-TA3-T
History: 2N65G-TA3-T
Список транзисторов
Обновления
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