2N65G-AA3-R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2N65G-AA3-R
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 44 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 35 nC
trⓘ - Время нарастания: 15 ns
Cossⓘ - Выходная емкость: 32 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: SOT-223
Аналог (замена) для 2N65G-AA3-R
2N65G-AA3-R Datasheet (PDF)
2n65l-aa3-r 2n65g-aa3-r 2n65l-ta3-t 2n65g-ta3-t 2n65l-tf3-t 2n65g-tf3-t 2n65l-tf1-t 2n65g-tf1-t 2n65l-tf2-t 2n65g-tf2-t 2n65l-tn3-r 2n65g-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N65-CB Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingappli
2n65g-aa3-r 2n65l-ta3-t 2n65g-ta3-t 2n65l-tf3-t 2n65g-tf3-t 2n65l-tf1-t 2n65g-tf1-t 2n65l-tf2-t 2n65g-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N65-CBS Preliminary Power MOSFET 2.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed s
2n65l-tms4-t 2n65g-tms4-t 2n65l-tn3-r 2n65g-tn3-r 2n65l-tnd-r 2n65g-tnd-r 2n65g-k08-5060-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N65-CBS Preliminary Power MOSFET 2.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed s
2n65l-tf3t-t 2n65g-tf3t-t 2n65l-tm3-t 2n65g-tm3-t 2n65l-tms-t 2n65g-tms-t 2n65l-tms2-t 2n65g-tms2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N65-CBS Preliminary Power MOSFET 2.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed s
2n65l-ta3-t 2n65g-ta3-t 2n65l-tf1-t 2n65g-tf1-t 2n65l-tf2-t 2n65g-tf2-t 2n65l-tf3-t 2n65g-tf3-t 2n65l-tf3t-t 2n65g-tf3t-t 2n65l-tm3-t 2n65g-tm3-t 2n65g-t6c-k.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications
2n65l-tma-t 2n65g-tma-t 2n65l-tms-t 2n65g-tms-t 2n65l-tn3-r 2n65g-tn3-r 2n65l-tn3-t 2n65g-tn3-t 2n65l-t2q-t 2n65g-t2q-t 2n65l-t60-k 2n65g-t60-k 2n65l-t6c-k.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications
2n65l-tf3t-t 2n65g-tf3t-t 2n65l-tm3-t 2n65g-tm3-t 2n65l-tms-t 2n65g-tms-t 2n65l-tms2-t 2n65g-tms2-t 2n65l-tms4-t 2n65g-tms4-t 2n65l-tnd-r 2n65g-tnd-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N65-CB Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingappli
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
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