Справочник MOSFET. 2N65KL-TA3-T

 

2N65KL-TA3-T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 2N65KL-TA3-T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 54 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 33 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
   Тип корпуса: TO-220
     - подбор MOSFET транзистора по параметрам

 

2N65KL-TA3-T Datasheet (PDF)

 ..1. Size:243K  utc
 2n65kl-ta3-t 2n65kg-ta3-t 2n65kl-tf3-t 2n65kg-tf3-t 2n65kl-tf1-t 2n65kg-tf1-t 2n65kl-tf2-t 2n65kg-tf2-t 2n65kl-tf3t-t 2n65kg-tf3t-t 2n65kg-tnd-r.pdf pdf_icon

2N65KL-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 2N65K-MT Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

 0.1. Size:298K  utc
 12n65kl-ta3-t 12n65kg-ta3-t 12n65kl-tf1-t 12n65kg-tf1-t 12n65kl-tf2-t 12n65kg-tf2-t 12n65kl-tf3-t 12n65kg-tf3-t 12n65kl-tq2-t 12n65kg-tq2-t 12n65kl-tq2-r 12n65kg-tq2-r.pdf pdf_icon

2N65KL-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced byusing UTCs proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance,

 6.1. Size:298K  1
 12n65kl-t 12n65kg-t.pdf pdf_icon

2N65KL-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced byusing UTCs proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance,

 6.2. Size:243K  utc
 2n65kl-tm3-t 2n65kg-tm3-t 2n65kl-tms-t 2n65kg-tms-t 2n65kl-tms2-t 2n65kg-tms2-t 2n65kl-tms4-t 2n65kg-tms4-t 2n65kl-tn3-r 2n65kg-tn3-r 2n65kl-tnd-r.pdf pdf_icon

2N65KL-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 2N65K-MT Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl

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History: KX6N70 | CEM3138

 

 
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