2N65KL-TF1-T. Аналоги и основные параметры
Наименование производителя: 2N65KL-TF1-T
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 21 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 33 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: TO-220F
Аналог (замена) для 2N65KL-TF1-T
- подборⓘ MOSFET транзистора по параметрам
2N65KL-TF1-T даташит
2n65kl-ta3-t 2n65kg-ta3-t 2n65kl-tf3-t 2n65kg-tf3-t 2n65kl-tf1-t 2n65kg-tf1-t 2n65kl-tf2-t 2n65kg-tf2-t 2n65kl-tf3t-t 2n65kg-tf3t-t 2n65kg-tnd-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N65K-MT Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl
12n65kl-ta3-t 12n65kg-ta3-t 12n65kl-tf1-t 12n65kg-tf1-t 12n65kl-tf2-t 12n65kg-tf2-t 12n65kl-tf3-t 12n65kg-tf3-t 12n65kl-tq2-t 12n65kg-tq2-t 12n65kl-tq2-r 12n65kg-tq2-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance,
12n65kl-tf1-t.pdf
isc N-Channel MOSFET Transistor 12N65KL-TF1-T FEATURES Static Drain-Source On-Resistance R
12n65kl-t 12n65kg-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance,
Другие IGBT... 2N65L-TF1-T, 2N65G-TF1-T, 2N65L-TF2-T, 2N65G-TF2-T, 2N65KL-TA3-T, 2N65KG-TA3-T, 2N65KL-TF3-T, 2N65KG-TF3-T, AOD4184A, 2N65KG-TF1-T, 2N65KL-TF2-T, 2N65KG-TF2-T, 2N65KL-TF3T-T, 2N65KG-TF3T-T, 2N65KG-TND-R, 2N65KL-TM3-T, 2N65KG-TM3-T
History: 12N60G-TA3-T | 12P10G-TQ2-T
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Список транзисторов
Обновления
MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG | HYG053N10NS1B | HYG053N10NS1P | AP220N04T | AP220N04P | QM3126M3 | AUP060N055
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