2N65G-T60-K - Даташиты. Аналоги. Основные параметры
Наименование производителя: 2N65G-T60-K
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 12.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 40 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: TO-126
Аналог (замена) для 2N65G-T60-K
2N65G-T60-K Datasheet (PDF)
2n65l-tma-t 2n65g-tma-t 2n65l-tms-t 2n65g-tms-t 2n65l-tn3-r 2n65g-tn3-r 2n65l-tn3-t 2n65g-tn3-t 2n65l-t2q-t 2n65g-t2q-t 2n65l-t60-k 2n65g-t60-k 2n65l-t6c-k.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications
2n65l-ta3-t 2n65g-ta3-t 2n65l-tf1-t 2n65g-tf1-t 2n65l-tf2-t 2n65g-tf2-t 2n65l-tf3-t 2n65g-tf3-t 2n65l-tf3t-t 2n65g-tf3t-t 2n65l-tm3-t 2n65g-tm3-t 2n65g-t6c-k.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications
2n65l-aa3-r 2n65g-aa3-r 2n65l-ta3-t 2n65g-ta3-t 2n65l-tf3-t 2n65g-tf3-t 2n65l-tf1-t 2n65g-tf1-t 2n65l-tf2-t 2n65g-tf2-t 2n65l-tn3-r 2n65g-tn3-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N65-CB Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingappli
2n65l-tms4-t 2n65g-tms4-t 2n65l-tn3-r 2n65g-tn3-r 2n65l-tnd-r 2n65g-tnd-r 2n65g-k08-5060-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N65-CBS Preliminary Power MOSFET 2.0A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65-CBS is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed s
Другие MOSFET... 2N65G-TND-R , 2N65L-TMA-T , 2N65G-TMA-T , 2N65L-TN3-T , 2N65G-TN3-T , 2N65L-T2Q-T , 2N65G-T2Q-T , 2N65L-T60-K , 5N60 , 2N65L-T6C-K , 2N65G-K08-5060-R , 2N7002G-AE2-R , 2N7002KL-AE2-R , 2N7002KG-AE2-R , 2N7002ZDWG-AL6-R , 2N80L-TA3-T , 2N80G-TA3-T .
History: DE275X2-501N16A | SL9968 | BLF245 | SLP170C04D | 1N65L-TN3-R | JCS6N90BA
History: DE275X2-501N16A | SL9968 | BLF245 | SLP170C04D | 1N65L-TN3-R | JCS6N90BA



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