2N80L-TF1-T Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2N80L-TF1-T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 24 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.4 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 18 nC
trⓘ - Время нарастания: 60 ns
Cossⓘ - Выходная емкость: 45 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 6.3 Ohm
Тип корпуса: TO220F
- подбор MOSFET транзистора по параметрам
2N80L-TF1-T Datasheet (PDF)
2n80l-ta3-t 2n80g-ta3-t 2n80l-tf1-t 2n80g-tf1-t 2n80l-tf2-t 2n80g-tf2-t 2n80l-tf3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N80 Power MOSFET 2.4A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. Italso can withstand high energy pu
12n80l-ta3-t 12n80g-ta3-t 12n80l-tf1-t 12n80g-tf1-t 12n80l-tf3-t 12n80g-tf3-t 12n80l-t3p-t 12n80g-t3p-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 12N80-FC Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET 11 DESCRIPTION TO-220 TO-220FThe UTC 12N80-FC provide excellent R , low gate charge DS(ON)and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 1 FEATURES * R 0.78 @ V =10V, I =6.0A DS(ON) GS DTO-220F1 TO-3P
12n80l-t47-t 12n80g-t47-t 12n80l-t3p-t 12n80g-t3p-t 12n80l-tc3-t 12n80g-tc3-t 12n80l-tf2-t 12n80g-tf2-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withsta
2n80l-tm3-r 2n80g-tm3-r 2n80l-tn3-r 2n80g-tn3-r 2n80l-tnd-r 2n80g-tnd-r 2n80g-tf3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 2N80 Power MOSFET 2.4A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. Italso can withstand high energy pu
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: CHM41A2PAGP | 50N06G-TA3-T | PPMS8N20V3 | IMW120R140M1H | VN2110 | IRF7910PBF-1
History: CHM41A2PAGP | 50N06G-TA3-T | PPMS8N20V3 | IMW120R140M1H | VN2110 | IRF7910PBF-1



Список транзисторов
Обновления
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
c535 transistor | irf3205 reemplazo | mpsu06 | кт630 | 2g381 transistor | 2sc2383 transistor equivalent | 2sd669 transistor | 75n65kdf