2N80G-TN3-R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2N80G-TN3-R
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 43 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 2.4 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 60 ns
Выходная емкость (Cd): 45 pf
Сопротивление сток-исток открытого транзистора (Rds): 6.3 Ohm
Тип корпуса: TO252
Аналог (замена) для 2N80G-TN3-R
2N80G-TN3-R Datasheet (PDF)
2n80l-tm3-r 2n80g-tm3-r 2n80l-tn3-r 2n80g-tn3-r 2n80l-tnd-r 2n80g-tnd-r 2n80g-tf3-t.pdf
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UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTCs advanced technology to provide customerswith planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withsta
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UNISONIC TECHNOLOGIES CO., LTD 2N80 Power MOSFET 2.4A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. Italso can withstand high energy pu
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