FDD8796 datasheet, аналоги, основные параметры

Наименование производителя: FDD8796  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 88 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm

Тип корпуса: TO252 DPAK

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Аналог (замена) для FDD8796

- подборⓘ MOSFET транзистора по параметрам

 

FDD8796 даташит

 ..1. Size:308K  fairchild semi
 fdd8796 fdu8796.pdf pdf_icon

FDD8796

March 2006 FDD8796/FDU8796 N-Channel PowerTrench MOSFET 25V, 35A, 5.7m General Description Features Max rDS(on) = 5.7m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be

 9.1. Size:418K  fairchild semi
 fdd8782 fdu8782.pdf pdf_icon

FDD8796

November 2009 FDD8782/FDU8782 N-Channel PowerTrench MOSFET 25V, 35A, 11m General Description Features Max rDS(on) = 11.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 14.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be

 9.2. Size:310K  fairchild semi
 fdd8770 fdu8770.pdf pdf_icon

FDD8796

March 2006 FDD8770/FDU8770 N-Channel PowerTrench MOSFET 25V, 35A, 4.0m General Description Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has bee

 9.3. Size:314K  fairchild semi
 fdd8780 fdu8780.pdf pdf_icon

FDD8796

March 2006 FDD8780/FDU8780 N-Channel PowerTrench MOSFET 25V, 35A, 8.5m General Description Features Max rDS(on) = 8.5m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 12.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has be

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... STT01L10, FDD86250, FDD86326, FDD8647L, FDD8770, FDD8778, FDD8780, FDD8782, 12N60, FDD8870, STT01L07, FDD8870F085, STS8816, FDD8874, STS6N20, FDD8876, STS6604L