FDD8870 - аналоги и даташиты транзистора

 

FDD8870 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: FDD8870
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 160 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 160 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
   Тип корпуса: TO252 DPAK
 

 Аналог (замена) для FDD8870

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDD8870 Datasheet (PDF)

 ..1. Size:331K  fairchild semi
 fdd8870 f085.pdf pdf_icon

FDD8870

Jan 2013FDD8870_F085N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters usingeither synchronous or conventional switching PWM rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Acontrollers. It has been optimized for l

 ..2. Size:486K  fairchild semi
 fdd8870 fdu8870.pdf pdf_icon

FDD8870

April 2008tmFDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been op

 ..3. Size:129K  onsemi
 fdd8870 fdu8870.pdf pdf_icon

FDD8870

September 2004FDD8870 / FDU8870N-Channel PowerTrench MOSFET30V, 160A, 3.9m General Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 4.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been o

 8.1. Size:659K  fairchild semi
 fdd8874 fdu8874.pdf pdf_icon

FDD8870

oApril 2008FDD8874 / FDU8874tmN-Channel PowerTrench MOSFET30V, 116A, 5.1mGeneral Description FeaturesThis N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m, VGS = 10V, ID = 35Aimprove the overall efficiency of DC/DC converters using rDS(ON) = 6.4m, VGS = 4.5V, ID = 35Aeither synchronous or conventional switching PWMcontrollers. It has been

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FDD86250 , FDD86326 , FDD8647L , FDD8770 , FDD8778 , FDD8780 , FDD8782 , FDD8796 , 5N65 , STT01L07 , FDD8870F085 , STS8816 , FDD8874 , STS6N20 , FDD8876 , STS6604L , FDD8878 .

 

 
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