Справочник MOSFET. FDD8870

 

FDD8870 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FDD8870

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 160 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 2.5 V

Максимально допустимый постоянный ток стока (Id): 160 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 91 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.0039 Ohm

Тип корпуса: TO252, DPAK

Аналог (замена) для FDD8870

 

 

FDD8870 Datasheet (PDF)

1.1. fdd8870 f085.pdf Size:331K _fairchild_semi

FDD8870
FDD8870

Jan 2013 FDD8870_F085 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to • rDS(ON) = 3.9mΩ, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM • rDS(ON) = 4.4mΩ, VGS = 4.5V, ID = 35A controllers. It has been optimized for l

1.2. fdd8870 fdu8870.pdf Size:486K _fairchild_semi

FDD8870
FDD8870

April 2008 tm FDD8870 / FDU8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m? General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m?, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m?, VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for lo

 4.1. fdd8874 fdu8874.pdf Size:659K _fairchild_semi

FDD8870
FDD8870

o April 2008 FDD8874 / FDU8874 tm N-Channel PowerTrench MOSFET 30V, 116A, 5.1m? General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 5.1m?, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.4m?, VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for

4.2. fdd8876 fdu8876.pdf Size:468K _fairchild_semi

FDD8870
FDD8870

N April 2008 FDD8876 / FDU8876 tm N-Channel PowerTrench MOSFET 30V, 73A, 8.2m? General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 8.2m?, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 10m?, VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for l

 4.3. fdd8878 fdu8878.pdf Size:400K _fairchild_semi

FDD8870
FDD8870

0 April 2008 FDD8878 / FDU8878 tm N-Channel PowerTrench MOSFET 30V, 40A, 15m? General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 15m?, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 18.5m?, VGS = 4.5V, ID = 35A controllers. It has been optimized for l

Другие MOSFET... FDD86250 , FDD86326 , FDD8647L , FDD8770 , FDD8778 , FDD8780 , FDD8782 , FDD8796 , IRF5305 , STT01L07 , FDD8870_F085 , STS8816 , FDD8874 , STS6N20 , FDD8876 , STS6604L , FDD8878 .

 

 
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