4N60KG-TF2-T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 4N60KG-TF2-T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 36 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 29 ns
Cossⓘ - Выходная емкость: 58 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
Тип корпуса: TO220F
Аналог (замена) для 4N60KG-TF2-T
4N60KG-TF2-T Datasheet (PDF)
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UNISONIC TECHNOLOGIES CO., LTD 4N60K-TC Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl
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UNISONIC TECHNOLOGIES CO., LTD 4N60K Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET 11 DESCRIPTION TO-220F TO-220F1The UTC 4N60K is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high sp
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GOFORDG4N60K5N60Features Application 600V, 4A High frequency switching mode power supply R = 2.0 (Typ.) @ V = 10V Uninterruptible Power Supply (UPS) DS(ON) GS Fast switching Electronic ballast 100% avalanche tested Improved dv/dt capability RoHS CompliantPackage TO-252 Ordering Information Part Number Marking Case Packaging
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SW4N60K N-channel Enhanced mode TO-220F/TO-251/TO-252 MOSFET Features TO-220F TO-251 TO-252 BVDSS : 600V High ruggedness ID : 4A Low RDS(ON) (Typ 1)@VGS=10V RDS(ON) : 1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Adapter,LED, Charger 3 3 3 1. Gate 2. Drain 3. Source 1 3
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SAMWIN SW4N60K N-channel TO-220F/I-PAK/D-PAK MOSFET BVDSS : 600V Features TO-220F TO-251 TO-252 ID : 4A High ruggedness RDS(ON) : 1.15 RDS(ON) (Max 1.15)@VGS=10V Gate Charge (Typ 13nC) Improved dv/dt Capability 1 1 1 2 2 2 100% Avalanche Tested 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced
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HM4N60K / HM4N60IHM4N60K / HM4N60I600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 16nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switchin
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
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