4N60KG-TF3T-T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 4N60KG-TF3T-T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 36 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 17.4 nC
trⓘ - Время нарастания: 29 ns
Cossⓘ - Выходная емкость: 58 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
Тип корпуса: TO220F
Аналог (замена) для 4N60KG-TF3T-T
4N60KG-TF3T-T Datasheet (PDF)
4n60kl-tf3t-t 4n60kg-tf3t-t 4n60kl-tm3-t 4n60kg-tm3-t 4n60kl-tn3-r 4n60kg-tn3-r 4n60kg-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N60K-TC Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl
4n60kl-ta3-t 4n60kg-ta3-t 4n60kl-tf3-t 4n60kg-tf3-t 4n60kl-tf1-t 4n60kg-tf1-t 4n60kl-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N60K-TC Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-TC is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching appl
4n60kl-ta3-t 4n60kg-ta3-t 4n60kl-tf3-t 4n60kg-tf3-t 4n60kl-tf1-t 4n60kg-tf1-t 4n60kl-tf2-t 4n60kg-tf2-t 4n60kl-tf3-t 4n60kg-tf3-t 4n60kl-tm3-t 4n60kg-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N60K-MT Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw
4n60kl-tms-t 4n60kg-tms-t 4n60kl-tms2-t 4n60kg-tms2-t 4n60kl-tms4-t 4n60kg-tms4-t 4n60kl-tn3-r 4n60kg-tn3-r 4n60kl-tnd-r 4n60kg-tnd-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N60K-MT Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed sw
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Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918