4N60G-TF3T-T Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 4N60G-TF3T-T
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 36 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 80 ns
Cossⓘ - Выходная емкость: 80 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
Тип корпуса: TO220F
Аналог (замена) для 4N60G-TF3T-T
4N60G-TF3T-T Datasheet (PDF)
4n60l-ta3-t 4n60g-ta3-t 4n60l-tf1-t 4n60g-tf1-t 4n60l-tf2-t 4n60g-tf2-t 4n60l-tf3-t 4n60g-tf3-t 4n60l-tf3t-t 4n60g-tf3t-t 4n60l-tq2-r 4n60g-tq2-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingapplication
4n60l-tm3-t 4n60g-tm3-t 4n60l-tms-t 4n60g-tms-t 4n60l-tn3-r 4n60g-tn3-r 4n60l-tnd-r 4n60g-tnd-r 4n60l-t2q-t 4n60g-t2q-t 4n60l-tq2-t 4n60g-tq2-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingapplication
sgp04n60 sgd04n60g.pdf

SGP04N60 SGD04N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-25
skb04n60g.pdf

SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight
Другие MOSFET... 4N60G-TA3-T , 4N60L-TF1-T , 4N60G-TF1-T , 4N60L-TF2-T , 4N60G-TF2-T , 4N60L-TF3-T , 4N60G-TF3-T , 4N60L-TF3T-T , IRLZ44N , 4N60L-TQ2-R , 4N60G-TQ2-R , 4N60L-TM3-T , 4N60G-TM3-T , 4N60L-TMS-T , 4N60G-TMS-T , 4N60L-TN3-R , 4N60G-TN3-R .
History: SIHFR214 | ZXMN2A01E6TC | IRFF640
History: SIHFR214 | ZXMN2A01E6TC | IRFF640



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