Справочник MOSFET. 4N60G-TM3-T

 

4N60G-TM3-T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 4N60G-TM3-T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 80 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
   Тип корпуса: TO251
     - подбор MOSFET транзистора по параметрам

 

4N60G-TM3-T Datasheet (PDF)

 ..1. Size:441K  utc
4n60l-tm3-t 4n60g-tm3-t 4n60l-tms-t 4n60g-tms-t 4n60l-tn3-r 4n60g-tn3-r 4n60l-tnd-r 4n60g-tnd-r 4n60l-t2q-t 4n60g-t2q-t 4n60l-tq2-t 4n60g-tq2-t.pdfpdf_icon

4N60G-TM3-T

UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingapplication

 7.1. Size:441K  utc
4n60l-ta3-t 4n60g-ta3-t 4n60l-tf1-t 4n60g-tf1-t 4n60l-tf2-t 4n60g-tf2-t 4n60l-tf3-t 4n60g-tf3-t 4n60l-tf3t-t 4n60g-tf3t-t 4n60l-tq2-r 4n60g-tq2-r.pdfpdf_icon

4N60G-TM3-T

UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchingapplication

 9.1. Size:342K  infineon
sgp04n60 sgd04n60g.pdfpdf_icon

4N60G-TM3-T

SGP04N60 SGD04N60 Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation combined with low conduction losses C Short circuit withstand time 10 s Designed for: - Motor controls GE- Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-25

 9.2. Size:1148K  infineon
skb04n60g.pdfpdf_icon

4N60G-TM3-T

SKB04N60 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IXFC80N10 | FDW254P

 

 
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