4N60L-TQ2-T datasheet, подбор замены

 ..1. Size:441K  utc
 4n60l-tm3-t 4n60g-tm3-t 4n60l-tms-t 4n60g-tms-t 4n60l-tn3-r 4n60g-tn3-r 4n60l-tnd-r 4n60g-tnd-r 4n60l-t2q-t 4n60g-t2q-t 4n60l-tq2-t 4n60g-tq2-t.pdf 

UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

 4.1. Size:441K  utc
 4n60l-ta3-t 4n60g-ta3-t 4n60l-tf1-t 4n60g-tf1-t 4n60l-tf2-t 4n60g-tf2-t 4n60l-tf3-t 4n60g-tf3-t 4n60l-tf3t-t 4n60g-tf3t-t 4n60l-tq2-r 4n60g-tq2-r.pdf 

UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

 9.1. Size:168K  apt
 apt94n60l2c3.pdf 

APT94N60L2C3 600V 94A 0.035 Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg G Avalanche Energy Rated TO-264 Max Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT94N60L2C3 UNIT VDSS Drain-Source Voltage 60

 9.2. Size:250K  microsemi
 apt94n60l2c3g.pdf 

APT94N60L2C3 600V 94A 0.035 Super Junction MOSFET TO-264 Max COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg D Avalanche Energy Rated TO-264 Max Package G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with S two parallel MOSFET die. It

 9.3. Size:651K  aosemi
 aot4n60 aotf4n60 aotf4n60l.pdf 

AOT4N60/AOTF4N60/AOTF4N60L 600V,4A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT4N60 & AOTF4N60 & AOTF4N60L have been fabricated using an advanced high voltage MOSFET process ID (at VGS=10V) 4A that is designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.4. Size:992K  bruckewell
 msf4n60l.pdf 

MSF4N60L 600V N-Channel MOSFET Description The MSF4N60L is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requir

 9.5. Size:2769K  first semi
 fir4n60lg.pdf 

FIR4N60LG Advanced N-Ch Power MOSFET PIN Connection TO-252(D-PAK) General Description FIR4N60LG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The 1 improved planar stripe cell and the improved guard ring 3 terminal have been especially tailored to minimize on-state resistance, provi