4N65L-TF3-T - описание и поиск аналогов

 

4N65L-TF3-T. Аналоги и основные параметры

Наименование производителя: 4N65L-TF3-T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 35 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 100 ns

Cossⓘ - Выходная емкость: 70 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm

Тип корпуса: TO220F

Аналог (замена) для 4N65L-TF3-T

- подборⓘ MOSFET транзистора по параметрам

 

4N65L-TF3-T даташит

 ..1. Size:368K  utc
 4n65l-ta3-t 4n65g-ta3-t 4n65l-tf1-t 4n65g-tf1-t 4n65l-tf2-t 4n65g-tf2-t 4n65l-tf3-t 4n65g-tf3-t 4n65l-tf3t-t 4n65g-tf3t-t.pdf pdf_icon

4N65L-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu

 7.1. Size:368K  utc
 4n65l-t2q-t 4n65g-t2q-t 4n65l-tq2-r 4n65g-tq2-r 4n65l-tq2-t 4n65g-tq2-t 4n65g-e-k08-5060-r 4n65l-tm3-t 4n65g-tm3-t.pdf pdf_icon

4N65L-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu

 7.2. Size:368K  utc
 4n65l-tms-t 4n65g-tms-t 4n65l-tms2-t 4n65g-tms2-t 4n65l-tms4-t 4n65g-tms4-t 4n65l-tn3-r 4n65g-tn3-r 4n65l-tnd-r 4n65g-tnd-r.pdf pdf_icon

4N65L-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu

 7.3. Size:368K  utc
 4n65l-tq2-r 4n65g-tq2-r 4n65l-tq2-t 4n65g-tq2-t 4n65g-k08-5060-r 4n65g-k08-5060-r 4n65l-t2q-t 4n65g-t2q-t 4n65l-tm3-t 4n65g-tm3-t.pdf pdf_icon

4N65L-TF3-T

UNISONIC TECHNOLOGIES CO., LTD 4N65 Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications inclu

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... 4N65L-TM3-T , 4N65G-TM3-T , 4N65L-TA3-T , 4N65G-TA3-T , 4N65L-TF1-T , 4N65G-TF1-T , 4N65L-TF2-T , 4N65G-TF2-T , 50N06 , 4N65G-TF3-T , 4N65L-TF3T-T , 4N65G-TF3T-T , 4N65L-TMS-T , 4N65G-TMS-T , 4N65L-TMS2-T , 4N65G-TMS2-T , 4N65L-TMS4-T .

History: SWD7N65K2 | WMQ30DP03TS | RUE002N02 | STW30NF20 | HY3410PM | RF4E110BN | HY3410B

 

 

 

 

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