4N80L-TF3-T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 4N80L-TF3-T
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 36 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 4 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 45 ns
Выходная емкость (Cd): 75 pf
Сопротивление сток-исток открытого транзистора (Rds): 3 Ohm
Тип корпуса: TO220F
Аналог (замена) для 4N80L-TF3-T
4N80L-TF3-T Datasheet (PDF)
4n80l-ta3-t 4n80g-ta3-t 4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p
4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t 4n80l-tn3-r 4n80g-tn3-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N80-FC Power MOSFET 4A, 800V N-CHANNEL POWER MOSFET 11TO-220F1TO-220F DESCRIPTION The UTC 4N80-FC provide excellent R , low gate DS(ON)charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURES0 TO-220F2* R 3.7 @ V =10V, I =2.0A DS(ON) GS D* Low
4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t 4n80l-tn3-r 4n80g-tn3-r 4n80l-tnd-r 4n80g-tnd-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 11TO-251TO-220F DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and 11DMOS technology. This technology is specialized in allowing a TO-220F1TO-262minimum on-state resistance, and superior switching per
4n80l-ta3-t 4n80g-ta3-t 4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-t2q-t 4n80g-t2q-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 11TO-251TO-220F DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and 11DMOS technology. This technology is specialized in allowing a TO-220F1TO-262minimum on-state resistance, and superior switching per
4n80l-tma-t 4n80g-tma-t 4n80l-tma8-t 4n80g-tma8-t 4n80l-tn3-r 4n80g-tn3-r 4n80l-tnd-r 4n80g-tnd-r 4n80l-t2q-t 4n80g-t2q-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p
apt34n80b2c3g apt34n80lc3g.pdf
APT34N80B2C3APT34N80LC3800V 34A 0.145Super Junction MOSFETT-MAXTO-264COOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy Rated G Popular T-MAX or TO-264 PackageSUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made
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