4N80L-TMA-T Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 4N80L-TMA-T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 75 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
Тип корпуса: TO251L
- подбор MOSFET транзистора по параметрам
4N80L-TMA-T Datasheet (PDF)
4n80l-tma-t 4n80g-tma-t 4n80l-tma8-t 4n80g-tma8-t 4n80l-tn3-r 4n80g-tn3-r 4n80l-tnd-r 4n80g-tnd-r 4n80l-t2q-t 4n80g-t2q-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p
4n80l-ta3-t 4n80g-ta3-t 4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p
4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t 4n80l-tn3-r 4n80g-tn3-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 4N80-FC Power MOSFET 4A, 800V N-CHANNEL POWER MOSFET 11TO-220F1TO-220F DESCRIPTION The UTC 4N80-FC provide excellent R , low gate DS(ON)charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURES0 TO-220F2* R 3.7 @ V =10V, I =2.0A DS(ON) GS D* Low
4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t 4n80l-tn3-r 4n80g-tn3-r 4n80l-tnd-r 4n80g-tnd-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 11TO-251TO-220F DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET usingUTCs advanced technology to provide costomers planar stripe and 11DMOS technology. This technology is specialized in allowing a TO-220F1TO-262minimum on-state resistance, and superior switching per
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: SUN830D | KIA2404A-247 | IAUC100N10S5N040 | STU601S | FQA28N50 | FMI03N60E | NCE3050I
History: SUN830D | KIA2404A-247 | IAUC100N10S5N040 | STU601S | FQA28N50 | FMI03N60E | NCE3050I



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
irfp4668 | mpsa56 | c3205 transistor | tip35c datasheet | 2n5401 datasheet | mj21194g | irfz34n | mn2488