4N80L-TMA8-T. Аналоги и основные параметры

Наименование производителя: 4N80L-TMA8-T

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 45 ns

Cossⓘ - Выходная емкость: 75 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm

Тип корпуса: TO251L

Аналог (замена) для 4N80L-TMA8-T

- подборⓘ MOSFET транзистора по параметрам

 

4N80L-TMA8-T даташит

 ..1. Size:254K  utc
 4n80l-tma-t 4n80g-tma-t 4n80l-tma8-t 4n80g-tma8-t 4n80l-tn3-r 4n80g-tn3-r 4n80l-tnd-r 4n80g-tnd-r 4n80l-t2q-t 4n80g-t2q-t.pdf pdf_icon

4N80L-TMA8-T

UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p

 6.1. Size:254K  utc
 4n80l-ta3-t 4n80g-ta3-t 4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t.pdf pdf_icon

4N80L-TMA8-T

UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC s advanced technology to provide costomers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance, and superior switching performance. It also can withstand high energy p

 6.2. Size:445K  utc
 4n80l-tf1-t 4n80g-tf1-t 4n80l-tf2-t 4n80g-tf2-t 4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t 4n80l-tn3-r 4n80g-tn3-r.pdf pdf_icon

4N80L-TMA8-T

UNISONIC TECHNOLOGIES CO., LTD 4N80-FC Power MOSFET 4A, 800V N-CHANNEL POWER MOSFET 1 1 TO-220F1 TO-220F DESCRIPTION The UTC 4N80-FC provide excellent R , low gate DS(ON) charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. 1 FEATURES0 TO-220F2 * R 3.7 @ V =10V, I =2.0A DS(ON) GS D * Low

 6.3. Size:232K  utc
 4n80l-tf3-t 4n80g-tf3-t 4n80l-tm3-t 4n80g-tm3-t 4n80l-tn3-r 4n80g-tn3-r 4n80l-tnd-r 4n80g-tnd-r.pdf pdf_icon

4N80L-TMA8-T

UNISONIC TECHNOLOGIES CO., LTD 4N80 Power MOSFET 4.0A, 800V N-CHANNEL POWER MOSFET 1 1 TO-251 TO-220F DESCRIPTION The UTC 4N80 is a N-channel mode power MOSFET using UTC s advanced technology to provide costomers planar stripe and 1 1 DMOS technology. This technology is specialized in allowing a TO-220F1 TO-262 minimum on-state resistance, and superior switching per

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