5N60L-TF2-T - описание и поиск аналогов

 ..1. Size:324K  utc
 5n60l-ta3-t 5n60g-ta3-t 5n60l-tf1-t 5n60g-tf1-t 5n60l-tf2-t 5n60g-tf2-t 5n60l-tf3-t 5n60g-tf3-t.pdf 

UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

 6.1. Size:324K  utc
 5n60l-tf3t-t 5n60g-tf3t-t 5n60l-tm3-t 5n60g-tm3-t 5n60l-tn3-r 5n60g-tn3-r 5n60l-k08-5060-r 5n60g-k08-5060-r.pdf 

UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

 9.1. Size:208K  international rectifier
 irfp15n60lpbf.pdf 

PD - 95517 SMPS MOSFET IRFP15N60LPbF Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 15A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications.

 9.2. Size:198K  international rectifier
 irfp15n60l.pdf 

PD - 94415A SMPS MOSFET IRFP15N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 15A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate c

 9.3. Size:246K  fairchild semi
 fgp5n60ls.pdf 

February 2010 FGP5N60LS tm 600V, 5A Field Stop IGBT Features General Description High Current Capability Using novel Field Stop IGBT Technology, Fairchild s new series of Field Stop IGBTs offer the optimum performance for HID bal- Low Saturation Voltage VCE(sat) =1.7V @ IC = 5A last where low conduction losses are essential. High Input Impedance RoHS Compliant Appl

 9.4. Size:147K  vishay
 irfp15n60lpbf.pdf 

IRFP15N60L, SiHFP15N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.385 RoHS* Lower Gate Charge Results in Simple Drive Qg (Max.) (nC) 100 COMPLIANT Requirements Qgs (nC) 30 Qgd (nC) 46 Enhanced dV/dt Capabilities Offer Improved

 9.5. Size:393K  onsemi
 fgp5n60ls.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.6. Size:847K  ncepower
 ncep015n60ll.pdf 

NCEP015N60LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =340A DS D switching performance. Both conduction and switching power R =1.0m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati

 9.7. Size:233K  inchange semiconductor
 irfp15n60l.pdf 

isc N-Channel MOSFET Transistor IRFP15N60L DESCRIPTION Drain Current I =40A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R =0.46 (Max) DS(on) High Power,High Speed Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies UPS Motor contro