5N60G-K08-5060-R Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 5N60G-K08-5060-R
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 28 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 42 ns
Cossⓘ - Выходная емкость: 55 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.2 Ohm
Тип корпуса: DFN5060-8
Аналог (замена) для 5N60G-K08-5060-R
5N60G-K08-5060-R Datasheet (PDF)
5n60l-tf3t-t 5n60g-tf3t-t 5n60l-tm3-t 5n60g-tm3-t 5n60l-tn3-r 5n60g-tn3-r 5n60l-k08-5060-r 5n60g-k08-5060-r.pdf

UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications
5n60l-ta3-t 5n60g-ta3-t 5n60l-tf1-t 5n60g-tf1-t 5n60l-tf2-t 5n60g-tf2-t 5n60l-tf3-t 5n60g-tf3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications
sgp15n60 sgw15n60g.pdf

SGP15N60 SGW15N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - paral
sgb15n60g.pdf

SGB15N60 Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 -
Другие MOSFET... 5N60G-TF3-T , 5N60L-TF3T-T , 5N60G-TF3T-T , 5N60L-TM3-T , 5N60G-TM3-T , 5N60L-TN3-R , 5N60G-TN3-R , 5N60L-K08-5060-R , 2N7000 , 5N65KL-TA3-T , 5N65KG-TA3-T , 5N65KL-TF3-T , 5N65KG-TF3-T , 5N65KL-TF1-T , 5N65KG-TF1-T , 5N65KL-TF2-T , 5N65KG-TF2-T .
History: SSF4414 | SML10J144 | OSG80R1K4PF | SI2309CDS-T1-GE3 | SML40C15N | 2SK308 | KHB5D0N50F2
History: SSF4414 | SML10J144 | OSG80R1K4PF | SI2309CDS-T1-GE3 | SML40C15N | 2SK308 | KHB5D0N50F2



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