Справочник MOSFET. 6N60KL-TND-R

 

6N60KL-TND-R Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 6N60KL-TND-R
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 23 nC
   trⓘ - Время нарастания: 66 ns
   Cossⓘ - Выходная емкость: 97 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO252
     - подбор MOSFET транзистора по параметрам

 

6N60KL-TND-R Datasheet (PDF)

 ..1. Size:310K  utc
 6n60kl-tms-t 6n60kg-tms-t 6n60kl-tms2-t 6n60kg-tms2-t 6n60kl-tms4-t 6n60kg-tms4-t 6n60kl-tn3-r 6n60kg-tn3-r 6n60kl-tnd-r 6n60kg-tnd-r 6n60kg-tm3-t.pdf pdf_icon

6N60KL-TND-R

UNISONIC TECHNOLOGIES CO., LTD 6N60K-MT Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap

 6.1. Size:310K  utc
 6n60kl-ta3-t 6n60kg-ta3-t 6n60kl-tf3-t 6n60kg-tf3-t 6n60kl-tf1-t 6n60kg-tf1-t 6n60kl-tf2-t 6n60kg-tf2-t 6n60kl-tf3-t 6n60kg-tf3-t 6n60kl-tm3-t.pdf pdf_icon

6N60KL-TND-R

UNISONIC TECHNOLOGIES CO., LTD 6N60K-MT Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap

 9.1. Size:653K  samwin
 swf6n60k.pdf pdf_icon

6N60KL-TND-R

SW6N60K N-channel Enhanced mode TO-220F MOSFET Features BVDSS : 600V TO-220F ID : 6A High ruggedness Low RDS(ON) (Typ 0.72)@VGS=10V RDS(ON) : 0.72 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 3 Application:Charger,LED 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is

 9.2. Size:724K  samwin
 swf16n60k.pdf pdf_icon

6N60KL-TND-R

SW16N60K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 600V ID : 16A High ruggedness Low RDS(ON) (Typ 0.21)@VGS=10V RDS(ON) :0.21 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application:LED, Charger, PC Power 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MO

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History: 10N60G-TF2-T

 

 
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