6N60KG-TND-R Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 6N60KG-TND-R
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 55 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6.2 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 66 ns
Cossⓘ - Выходная емкость: 97 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO252
- подбор MOSFET транзистора по параметрам
6N60KG-TND-R Datasheet (PDF)
6n60kl-tms-t 6n60kg-tms-t 6n60kl-tms2-t 6n60kg-tms2-t 6n60kl-tms4-t 6n60kg-tms4-t 6n60kl-tn3-r 6n60kg-tn3-r 6n60kl-tnd-r 6n60kg-tnd-r 6n60kg-tm3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 6N60K-MT Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap
6n60kl-ta3-t 6n60kg-ta3-t 6n60kl-tf3-t 6n60kg-tf3-t 6n60kl-tf1-t 6n60kg-tf1-t 6n60kl-tf2-t 6n60kg-tf2-t 6n60kl-tf3-t 6n60kg-tf3-t 6n60kl-tm3-t.pdf

UNISONIC TECHNOLOGIES CO., LTD 6N60K-MT Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap
swf6n60k.pdf

SW6N60K N-channel Enhanced mode TO-220F MOSFET Features BVDSS : 600V TO-220F ID : 6A High ruggedness Low RDS(ON) (Typ 0.72)@VGS=10V RDS(ON) : 0.72 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 3 Application:Charger,LED 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is
swf16n60k.pdf

SW16N60K N-channel Enhanced mode TO-220F MOSFET Features TO-220F BVDSS : 600V ID : 16A High ruggedness Low RDS(ON) (Typ 0.21)@VGS=10V RDS(ON) :0.21 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application:LED, Charger, PC Power 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MO
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: SMC3054 | SLD70R900S2 | AUIRFSL3107 | BLP012N08-T | MRF166 | 2SK1053 | NCE3035G
History: SMC3054 | SLD70R900S2 | AUIRFSL3107 | BLP012N08-T | MRF166 | 2SK1053 | NCE3035G



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