6N65KL-TF1-T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 6N65KL-TF1-T
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 22.5 nC
trⓘ - Время нарастания: 65 ns
Cossⓘ - Выходная емкость: 88 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
Тип корпуса: TO220F
Аналог (замена) для 6N65KL-TF1-T
6N65KL-TF1-T Datasheet (PDF)
6n65kl-ta3-t 6n65kg-ta3-t 6n65kl-tf3-t 6n65kg-tf3-t 6n65kl-tf1-t 6n65kg-tf1-t 6n65kl-tf2-t 6n65kg-tf2-t 6n65kl-tf3-t 6n65kg-tf3-t 6n65kl-tm3-t 6n65kg-tm3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 6N65K-MT Power MOSFET 6A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of swi
6n65kl-tms-t 6n65kg-tms-t 6n65kl-tms2-t 6n65kg-tms2-t 6n65kl-tms4-t 6n65kg-tms4-t 6n65kl-tn3-r 6n65kg-tn3-r 6n65kl-tnd-r 6n65kg-tnd-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 6N65K-MT Power MOSFET 6A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of swi
stf6n65k3 stfi6n65k3 stu6n65k3.pdf
STF6N65K3, STFI6N65K3, STU6N65K3N-channel 650 V, 1.1 typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAKDatasheet production dataFeaturesOrder codes VDSS RDS(on) max. ID PtotSTF6N65K3TAB30 WSTFI6N65K3 650 V
stfi6n65k3 stu6n65k3.pdf
STF6N65K3, STFI6N65K3, STU6N65K3N-channel 650 V, 1.1 typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAKDatasheet production dataFeaturesOrder codes VDSS RDS(on) max. ID PtotSTF6N65K3TAB30 WSTFI6N65K3 650 V
swf6n65k swi6n65k swn6n65k swd6n65k swu6n65k swmn6n65k.pdf
SW6N65K N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252/TO-262 /TO-220SF MOSFET Features TO251 TO220F TO251N TO252 TO262 TO220SF BVDSS : 650V High ruggedness ID : 6A Low RDS(ON) (Typ 0.8)@VGS=10V RDS(ON) : 0.8 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 1 1 1 2 2 2 2 2 2 3 3 Applicat
sw16n65k swp16n65k swf16n65k swb16n65k.pdf
SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS : 650V ID : 16A High ruggedness Low RDS(ON) (Typ 0.23)@VGS=10V RDS(ON) :0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charge, PC Power 3 3 3 1. Gate 2. Drain 3. Source
swp16n65k swf16n65k swb16n65k.pdf
SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS : 650V ID : 16A High ruggedness Low RDS(ON) (Typ 0.23)@VGS=10V RDS(ON) :0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charger, PC Power 3 3 3 1. Gate 2. Drain 3. Source
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: QM1830M3 | SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD