Справочник MOSFET. 6N65KL-TF1-T

 

6N65KL-TF1-T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 6N65KL-TF1-T
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 65 ns
   Cossⓘ - Выходная емкость: 88 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для 6N65KL-TF1-T

 

 

6N65KL-TF1-T Datasheet (PDF)

 ..1. Size:281K  utc
 6n65kl-ta3-t 6n65kg-ta3-t 6n65kl-tf3-t 6n65kg-tf3-t 6n65kl-tf1-t 6n65kg-tf1-t 6n65kl-tf2-t 6n65kg-tf2-t 6n65kl-tf3-t 6n65kg-tf3-t 6n65kl-tm3-t 6n65kg-tm3-t.pdf

6N65KL-TF1-T 6N65KL-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 6N65K-MT Power MOSFET 6A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of swi

 6.1. Size:281K  utc
 6n65kl-tms-t 6n65kg-tms-t 6n65kl-tms2-t 6n65kg-tms2-t 6n65kl-tms4-t 6n65kg-tms4-t 6n65kl-tn3-r 6n65kg-tn3-r 6n65kl-tnd-r 6n65kg-tnd-r.pdf

6N65KL-TF1-T 6N65KL-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 6N65K-MT Power MOSFET 6A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65K-MT is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used inhigh speed switching applications of swi

 9.1. Size:901K  st
 stf6n65k3 stfi6n65k3 stu6n65k3.pdf

6N65KL-TF1-T 6N65KL-TF1-T

STF6N65K3, STFI6N65K3, STU6N65K3N-channel 650 V, 1.1 typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAKDatasheet production dataFeaturesOrder codes VDSS RDS(on) max. ID PtotSTF6N65K3TAB30 WSTFI6N65K3 650 V

 9.2. Size:901K  st
 stfi6n65k3 stu6n65k3.pdf

6N65KL-TF1-T 6N65KL-TF1-T

STF6N65K3, STFI6N65K3, STU6N65K3N-channel 650 V, 1.1 typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAKDatasheet production dataFeaturesOrder codes VDSS RDS(on) max. ID PtotSTF6N65K3TAB30 WSTFI6N65K3 650 V

 9.3. Size:987K  samwin
 swf6n65k swi6n65k swn6n65k swd6n65k swu6n65k swmn6n65k.pdf

6N65KL-TF1-T 6N65KL-TF1-T

SW6N65K N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252/TO-262 /TO-220SF MOSFET Features TO251 TO220F TO251N TO252 TO262 TO220SF BVDSS : 650V High ruggedness ID : 6A Low RDS(ON) (Typ 0.8)@VGS=10V RDS(ON) : 0.8 Low Gate Charge (Typ 17nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 1 1 1 2 2 2 2 2 2 3 3 Applicat

 9.4. Size:1213K  samwin
 sw16n65k swp16n65k swf16n65k swb16n65k.pdf

6N65KL-TF1-T 6N65KL-TF1-T

SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS : 650V ID : 16A High ruggedness Low RDS(ON) (Typ 0.23)@VGS=10V RDS(ON) :0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charge, PC Power 3 3 3 1. Gate 2. Drain 3. Source

 9.5. Size:1143K  samwin
 swp16n65k swf16n65k swb16n65k.pdf

6N65KL-TF1-T 6N65KL-TF1-T

SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS : 650V ID : 16A High ruggedness Low RDS(ON) (Typ 0.23)@VGS=10V RDS(ON) :0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charger, PC Power 3 3 3 1. Gate 2. Drain 3. Source

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top