Справочник MOSFET. 6N70KL-TND-R

 

6N70KL-TND-R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 6N70KL-TND-R
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 21.8 nC
   trⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.6 Ohm
   Тип корпуса: TO252D

 Аналог (замена) для 6N70KL-TND-R

 

 

6N70KL-TND-R Datasheet (PDF)

 ..1. Size:214K  utc
 6n70kl-tms-t 6n70kg-tms-t 6n70kl-tms2-t 6n70kg-tms2-t 6n70kl-tms4-t 6n70kg-tms4-t 6n70kl-tn3-r 6n70kg-tn3-r 6n70kl-tnd-r 6n70kg-tnd-r.pdf

6N70KL-TND-R 6N70KL-TND-R

UNISONIC TECHNOLOGIES CO., LTD 6N70K-MT Power MOSFET 6.0A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N70K-MT is an N-channel mode power MOSFET using UTCs advanced technology to provide customers with a minimum on-state resistance, high switching speed, low gate charge and low input capacitance. The UTC 6N70K-MT is universally applied in high efficiency switch m

 6.1. Size:214K  utc
 6n70kl-tf3-t 6n70kg-tf3-t 6n70kl-tf1-t 6n70kg-tf1-t 6n70kl-tf2-t 6n70kg-tf2-t 6n70kl-tf3t-t 6n70kg-tf3t-t 6n70kl-tm3-t 6n70kg-tm3-t.pdf

6N70KL-TND-R 6N70KL-TND-R

UNISONIC TECHNOLOGIES CO., LTD 6N70K-MT Power MOSFET 6.0A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N70K-MT is an N-channel mode power MOSFET using UTCs advanced technology to provide customers with a minimum on-state resistance, high switching speed, low gate charge and low input capacitance. The UTC 6N70K-MT is universally applied in high efficiency switch m

 9.1. Size:444K  silan
 svf6n70mjg svf6n70dtr svf6n70k svf6n70mn.pdf

6N70KL-TND-R 6N70KL-TND-R

SVF6N70MJG/D/K/N 6A700V N 2SVF6N70MJG/D/K/N N MOS 1 F-CellTM VDMOS 3 1.

 9.2. Size:964K  samwin
 swf6n70k swn6n70k swd6n70k.pdf

6N70KL-TND-R 6N70KL-TND-R

SW6N70K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-220F TO-251N TO-252 BVDSS : 700V High ruggedness ID : 6A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Charger,LED,TV-Power 3 3 3 1. Gate 2. Drain 3. Source 1

 9.3. Size:862K  samwin
 sw6n70k swf6n70k swn6n70k swd6n70k.pdf

6N70KL-TND-R 6N70KL-TND-R

SW6N70K N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features TO-251N TO-220F TO-252 BVDSS : 700V High ruggedness ID : 6A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.1 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:Charge,LED,TV-Power 3 3 3 1. Gate 2. Drain 3. Source

 9.4. Size:1075K  samwin
 swu16n70k swb16n70k swf16n70k.pdf

6N70KL-TND-R 6N70KL-TND-R

SW16N70K N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET Features TO-262 TO-220F BVDSS : 700V TO-263 High ruggedness ID : 16A Low RDS(ON) (Typ 0.23)@VGS=10V Low Gate Charge (Typ 42nC) RDS(ON) : 0.23 Improved dv/dt Capability 100% Avalanche Tested 1 1 1 2 2 Application: DC-DC,LED,PC 2 2 3 3 3 1. Gate 2. Drain 3. S

 9.5. Size:494K  convert
 cs6n70f cs6n70k cs6n70u cs6n70d.pdf

6N70KL-TND-R 6N70KL-TND-R

nvertSuzhou Convert Semiconductor Co ., Ltd.CS6N70F,CS6N70K,CS6N70U,CS6N70D700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS6N70F TO-220F

 9.6. Size:713K  convert
 csfr6n70f csfr6n70k csfr6n70u csfr6n70d.pdf

6N70KL-TND-R 6N70KL-TND-R

CSFR6N70F,CSFR6N70KnvertSuzhou Convert Semiconductor Co ., Ltd.CSFR6N70U,CSFR6N70D700V N-Channel MOSFETFEATURES Fast switching Integrate fast recovery diode Fast switching speed 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Motor Controls Power Factor Correction (PFC)Device Marking and Package In

 9.7. Size:1192K  cn hmsemi
 hm6n70k.pdf

6N70KL-TND-R 6N70KL-TND-R

HM6N70K General Description VDSS 700 V HM6N70K, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 85 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.8 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization an

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