UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching 1speed, low thermal resistance, usually used at telecom and 1computer application. TO-220F1 TO-220F2 FEATURES * RDS(ON)

STP75N75F4N-channel 75 V, 0.0092 typ., 78 A STripFET DeepGATEPower MOSFET in a TO-220 packageDatasheet production dataFeaturesTABType VDSS RDS(on) max IDSTP75N75F4 75 V

UNISONIC TECHNOLOGIES CO., LTD UTT75N75 Preliminary Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics including 1fast switching speed and low thermal resistance. It is usually used TO-220in the telecom and computer applications. FEATURES * RDS(O

UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET 11TO-220 TO-220F DESCRIPTION The UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching 1speed, low thermal resistance, usually used at telecom and 1computer application. TO-220F1 TO-220F2 FEATURES * RDS(ON)

TSM75N75 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Drain 3. Source 75 11 @ VGS =10V 75 Features Block Diagram Advanced Trench Technology Low RDS(ON) 11m (Max.) Low gate charge typical @ 81nC (Typ.) Low Crss typical @ 339pF (Typ.) Ordering Information Part No. Package Packing

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP75N75 N-Channel Power MOSFET TO-220-3L DESCRIPTION The CJP75N75 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. Good stability and 1. GATE uniformity with high EAS .This device is suitable for use in PWM, 2. DRAIN load switching and gen

KMB075N75PSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fast OCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSG_+correction , electronic lamp ballasts based o

Shenzhen Tuofeng Semiconductor Technology Co., Ltd75N75N-Channel Enhancement Mode MOSFETFeatures Pin Description 70V/80A,RDS(ON)=5.6 m (typ.) @ VGS=10V Avalanche Rated Reliable and RuggedGDS Lead Free and Green Devices Available(RoHS Compliant) DApplicationsG Power Management for Inverter Systems.SN-Channel MOSFETNote: lead-free products contain m

BR75N75(BRCS75N75R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hig

LESHAN RADIO COMPANY, LTD.L75N751/7LESHAN RADIO COMPANY, LTD.L75N752/7LESHAN RADIO COMPANY, LTD.L75N753/7LESHAN RADIO COMPANY, LTD.L75N754/7LESHAN RADIO COMPANY, LTD.L75N755/7LESHAN RADIO COMPANY, LTD.L75N756/7LESHAN RADIO COMPANY, LTD.L75N757/7

Silicon N-Channel Power MOSFET R CS75N75 B8H General Description VDSS 75 V CS75N75 B8H, the silicon N-channel Enhanced ID 100 A PD(TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 10.2 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

CS75N75N PD TC=25 220 W 1.4 W/ID VGS=10V,TC=25 75 AID VGS=10V,TC=100 56 AIDM 300 A VGS 20 VTjm +150 Tstg -55 +150 RthJC 0.8 /W BVDSS VGS=0V,ID=0.25mA 75 VRDS on VGS=10V,ID=48A 0.0125 0.015

SEMICONDUCTORFTK75N75TECHNICAL DATAID=75A Feathers: BV=75V Advanced trench process technology Rdson=10mohm Special designed for Convertors and power controls High density cell design for ultra low Rdson TO-220 Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The FTK75N75 is a new generation of middle voltage and 123

Preliminary Data Sheet Bruckewell Technology Corp., Ltd. MS75N75 75V N-Channel MOSFET FEATURES RDS(on) (Max 0.017 )@VGS=10V Gate Charge (Typical 85nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (175C) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25C unless

N N-CHANNEL MOSFET FHP75N75A MAIN CHARACTERISTICS FEATURES ID 75 A Low gate charge VDSS 75 V Crss ( 270pF) Low Crss (typical 270pF ) Rdson-typ @Vgs=10V 9..5m Fast switching Qg-typ 95nC 100% 100% avalanche tested dv/dt Improved

PS75N75A 75V Single Channel NMOSEFT Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS75N75A 75V Single Channel NMOSFET2. Applications 1. General Description Solenoid and relay drivers The PS75N75A uses advanced trench technology DC motor control and design to provide excellent Rds(on) with low DC-DC convertersgate charge. This device

Fab 2014BVDSS = 70 VRDS(on) typ = 6 HRP75N75V ID = 48 A70V N-Channel Trench MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 80 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.0 (Typ.) @VGS=10V 100% Avalanche TestedAbso

Fab 2014BVDSS = 70 VRDS(on) typ = 6 HRS75N75V ID = 48 A70V N-Channel Trench MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 80 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.0 (Typ.) @VGS=10V 100% Avalanche TestedAbs

E L E C T R O N I C PS75N75N-Channel Enhancement Mode Field Effect Transistor - 75Amp 75Volt Application -Servomotor control -Power MOSFET gate drivers -Other switching applications Circuit Feature -Small surface mounting type D-High density cell design for low RDS(ON) -Suitable for high packing density -Rugged and reliable -High saturation current cap

ST75N75 N Channel Enhancement Mode MOSFET 75.0A DESCRIPTION ST75N75 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION FEATURE TO220-3L 75V/40.0A, RDS(ON) = 8m (Typ.) @VGS = 10V Super high density cell design for extremely low RDS(ON) Exceptional on-r

Silicon N-Channel Power MOSFET R CS75N75 B8H General Description VDSS 75 V CS75N75 B8H, the silicon N-channel Enhanced ID 100 A PD(TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 10.2 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

HM75N N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N uses advanced trench technology and BVDSS typ. 75 design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 7.0 mThis device is suitable for use in PWM, load switching and max. 9.0 m general purpose applications. ID 75 A Features VDS=75VID= A@

HM75N N-Channel Enhancement Mode Power MOSFET Product Summary General Description The HM75N uses advanced trench technology and BVDSS typ. 75 design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 7.0 mThis device is suitable for use in PWM, load switching and max. 9.0 m general purpose applications. ID 75 A Features VDS=75VID= A

isc N-Channel MOSFET Transistor 75N75FEATURESDrain Current I = 75A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 0.011(Max)DS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenoid and relay driversDC motor controlDC-DC converters DCAutomotive environ