Справочник MOSFET. 7N60L-TF1-T

 

7N60L-TF1-T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 7N60L-TF1-T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7.4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 180 ns
   Cossⓘ - Выходная емкость: 125 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для 7N60L-TF1-T

   - подбор ⓘ MOSFET транзистора по параметрам

 

7N60L-TF1-T Datasheet (PDF)

 ..1. Size:349K  utc
 7n60l-ta3-t 7n60g-ta3-t 7n60l-tf3-t 7n60g-tf3-t 7n60l-tf1-t 7n60g-tf1-t 7n60l-tf2-t 7n60g-tf2-t.pdf pdf_icon

7N60L-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicatio

 6.1. Size:349K  utc
 7n60l-tf3t-t 7n60g-tf3t-t 7n60l-t2q-t 7n60g-t2q-t 7n60l-tq2-t 7n60g-tq2-t 7n60l-tq2-r 7n60g-tq2-r.pdf pdf_icon

7N60L-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicatio

 9.1. Size:187K  utc
 7n60l.pdf pdf_icon

7N60L-TF1-T

UNISONIC TECHNOLOGIES CO., LTD 7N60L Power MOSFET 7.4 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 7N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicati

Другие MOSFET... 75N75L-TQ2-T , 75N75G-TQ2-T , 75N75L-TQ2-R , 75N75G-TQ2-R , 7N60L-TA3-T , 7N60G-TA3-T , 7N60L-TF3-T , 7N60G-TF3-T , IRFZ24N , 7N60G-TF1-T , 7N60L-TF2-T , 7N60G-TF2-T , 7N60L-TF3T-T , 7N60G-TF3T-T , 7N60L-T2Q-T , 7N60G-T2Q-T , 7N60L-TQ2-T .

History: HM20P02D | VBZM20P06 | IPB70N04S4-06 | IRF5NJ6215

 

 
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