Справочник MOSFET. 7N60G-T2Q-T

 

7N60G-T2Q-T Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 7N60G-T2Q-T
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 142 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7.4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 180 ns
   Cossⓘ - Выходная емкость: 125 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
   Тип корпуса: TO262
 

 Аналог (замена) для 7N60G-T2Q-T

   - подбор ⓘ MOSFET транзистора по параметрам

 

7N60G-T2Q-T Datasheet (PDF)

 ..1. Size:349K  utc
 7n60l-tf3t-t 7n60g-tf3t-t 7n60l-t2q-t 7n60g-t2q-t 7n60l-tq2-t 7n60g-tq2-t 7n60l-tq2-r 7n60g-tq2-r.pdf pdf_icon

7N60G-T2Q-T

UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicatio

 7.1. Size:349K  utc
 7n60l-ta3-t 7n60g-ta3-t 7n60l-tf3-t 7n60g-tf3-t 7n60l-tf1-t 7n60g-tf1-t 7n60l-tf2-t 7n60g-tf2-t.pdf pdf_icon

7N60G-T2Q-T

UNISONIC TECHNOLOGIES CO., LTD 7N60 Power MOSFET 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applicatio

 9.1. Size:540K  chongqing pingwei
 7n60gs 7n60ds.pdf pdf_icon

7N60G-T2Q-T

7N60(G,D)S7 Amps,600 Volts N-Channel Super Junction Power MOSFETFEATURE 7A,600V,R =0.58@V =10V/3.5ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability Integrated ESD protection diodeTO-252 TO-2517N60GS 7N60DSAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT7N60

Другие MOSFET... 7N60G-TF3-T , 7N60L-TF1-T , 7N60G-TF1-T , 7N60L-TF2-T , 7N60G-TF2-T , 7N60L-TF3T-T , 7N60G-TF3T-T , 7N60L-T2Q-T , STP80NF70 , 7N60L-TQ2-T , 7N60G-TQ2-T , 7N60L-TQ2-R , 7N60G-TQ2-R , 7N65KL-TA3-T , 7N65KG-TA3-T , 7N65KL-TF3-T , 7N65KG-TF3-T .

History: NCE0224AF | TSJ10N10AT | HGN024N06SL | AO4821 | CTLDM8120-M621H | BUK9535-100A

 

 
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